Looking for the maximum low-temperature conductivity in selectively doped double heterojunctions

Simserides, Constantinos; Triberis, G. P.

doi:10.1088/0953-8984/8/30/002

Cited by 7 publications

(11 citation statements)

References 35 publications

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“…6 we plot the screened mobilities due to alloy ͑AL͒ and to interface roughness ͑IR͒ scattering as a function of the wire width, Y, for two different electron concentrations ͑a͒ N 1D ϭ10 5 cm Ϫ1 and ͑b͒ N 1D ϭ10 6 cm Ϫ1 . For the case of the alloy scattering ␦Vϭ1 eV, 29 while the value of Al mole fraction is taken cϭ0.3. The value of c for the structure under study is structurally varying along the surroundings taking values in a range of ͓0.24,0.4͔.…”

Section: Resultsmentioning

confidence: 99%

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

Tsetseri

Triberis

2004

Phys. Rev. B

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The low temperature mobility in V-shaped AlGaAs/GaAs quantum wires is theoretically investigated. The energy eigenstates and the eigenvalues of the system under study are calculated using a finite difference method. The cartography of the interface allows for realistic values of the rms value of the roughness fluctuations in depth and the autocorrelation length. For one subband occupation we calculate the screened and the unscreened mobility due to the interface roughness scattering. The corresponding mobility exhibits ultrahigh values. We also evaluate the mobility due to alloy scattering. The interface roughness turns out to be the dominant scattering mechanism. When the second electronic subband becomes populated, we investigate the intrasubband and intersubband scattering due to interface roughness, taking into account or excluding screening effects. Comparison is made with other reports.

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Section: Resultsmentioning

confidence: 99%

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

Tsetseri

Triberis

2004

Phys. Rev. B

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“…In this case, the DOS is not a step-like function, as it is with B = 0. We show that its form undergoes important changes as B is increased, especially in wide double heterojunctions where usually many subbands are present [20,21]. The self-consistent study of the electronic states and specifically of the DOS is of great importance for the explanation of the experimental magnetoconductivity in these structures.…”

Section: Introductionmentioning

confidence: 89%

“…Our second aim is to study a bilayer electron system, different from the commonly used symmetrical double square well. Another potentially bilayer electron system is the symmetrical double heterojunction, when the well width is increased a lot, due to the transition from a 'perfect' square quantum well to a system of two separated heterojunctions [20]. In the former structure a high barrier separates the two electron layers.…”

Section: Introductionmentioning

confidence: 99%

The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field

Simserides

1999

J. Phys.: Condens. Matter

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We calculate the electronic states of AlxGa1−xAs/GaAs/AlxGa1−xAs double heterojunctions subjected to a magnetic field parallel to the quasi two-dimensional electron gas. We study the energy dispersion curves, the density of states, the electron concentration and the distribution of the electrons in the subbands.The parallel magnetic field induces severe changes in the density of states, which are of crucial importance for the explanation of the magnetoconductivity in these structures. However, to our knowledge, there is no systematic study of the density of states under these circumstances. We attempt a contribution in this direction.For symmetric heterostructures, the depopulation of the higher subbands, the transition from a single to a bilayer electron system and the domination of the bulk Landau levels in the centre the wide quantum well, as the magnetic field is continuously increased, are presented in the "energy dispersion picture" as well as in the "electron concentration picture" and in the "density of states picture".

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“…The electron spectrum of δ-doped quantum wells can be calculated from solving the Schrödinger equation jointly with the Poisson one (SP) [28][29][30][31][32][33][34][35][38][39][40][41][42][43][44][45][46][47]. It is possible to investigate δ-doped quantum wells also with a simpler approach based on the statistical Thomas-Fermi (TF) method [48][49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF Δ-Doped QUANTUM WELLS IN N-Si WITH MANY-BODY CORRECTIONS

Castrejon-Martinez¹,

Grimalsky²,

Gaggero‐Sager³

et al. 2013

PIER M

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The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at finite temperatures; then the obtained electron potential energy is applied to the iteration procedure with solving the Schrödinger equations for the electron spectrum and the Poisson one for the potential energy. The many-body corrections to the electron spectrum in the quantum well also have been investigated. The combined method demonstrates a rapid convergence. It is shown that that the simple Thomas-Fermi method gives a good approximation for the electron potential energy and for the total electron concentration within the well.

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Looking for the maximum low-temperature conductivity in selectively doped double heterojunctions

Cited by 7 publications

References 35 publications

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

Mobility in V-shaped quantum wires due to interface roughness and alloy scattering

The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field

COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF Δ-Doped QUANTUM WELLS IN N-Si WITH MANY-BODY CORRECTIONS

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