Longitudinal spatial hole burning in a quantum-dot laser

Asryan, Levon V.; Suris, R. A.

doi:10.1109/3.880655

Cited by 41 publications

(39 citation statements)

References 19 publications

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“…Due to this effect, the average (over the longitudinal direction) modal gain and hence the level occupancy in a QD, are both higher than their threshold values [26]. The higher the injection current, the larger is this increase.…”

Section: A Confined Carrier Level Occupancy In a Qd (Carrier Densitymentioning

confidence: 99%

“…6) The free-carrier density dependent component of the internal losses is ignored. This is justified for properly designed QD lasers, when parameters of the structure are well away from their critical values [26] and hence the carrier density is low. Thus, the internal losses are taken as constant, which is also supported by the experimental data [15].…”

Section: )mentioning

confidence: 99%

“…The low value of 1/2 corresponds to vanishing total losses (infinitely long cavities and zero internal losses), when the lasing threshold is close to the transparency (inversion) threshold. The high value of 1 is for the highest tolerable losses determined by the maximum modal gain (equivalently, when one of the structure parameters , , or , is close to its critical tolerable value, , , or , respectively [26]). The minimum value of the ratio (obtained when , and hence ) is typically much less than unity.…”

Section: ) "Capture Time" Into the Qd Ensemblementioning

confidence: 99%

“…In general, however, is a tangible fraction of the total . It is this component that should be first of all suppressed to minimize and optimize the structure [26], [29], [30], [32]- [34]. The conclusion that high-power performance of a laser is inseparably controlled by the threshold characteristics is of great importance.…”

Section: F Key Parameter Controlling Power Characteristicsmentioning

confidence: 99%

“…Device degradation issues (such as catastrophic optical damage at the mirror facets at high-power densities [24], [25]) are not addressed either. 2) Spatial hole burning (SHB) and multilongitudinal behavior of the laser generation (due to a standing wave nature of the emitted light and spatially discrete arrangement of QDs [26]) are not taken into consideration. Hence the longitudinal ( ) coordinate dependence of the confined carrier level occupancies in QDs and of the free-carrier densities in the OCL is ignored const (…”

Section: )mentioning

confidence: 99%

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Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Abstract-We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency int that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling int and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm 2 ). Output powers in excess of 10 W at int higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.Index Terms-Quantum dots (QDs), quantum wells (QWs), quantum wires (QWRs), semiconductor heterojunctions, semiconductor lasers.

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Section: A Confined Carrier Level Occupancy In a Qd (Carrier Densitymentioning

confidence: 99%

Section: )mentioning

confidence: 99%

Section: ) "Capture Time" Into the Qd Ensemblementioning

confidence: 99%

Section: F Key Parameter Controlling Power Characteristicsmentioning

confidence: 99%

Section: )mentioning

confidence: 99%

See 3 more Smart Citations

Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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References

2011

Ultrafast Lasers Based on Quantum Dot Structures

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Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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Longitudinal spatial hole burning in a quantum-dot laser

Cited by 41 publications

References 19 publications

Internal efficiency of semiconductor lasers with a quantum-confined active region

Internal efficiency of semiconductor lasers with a quantum-confined active region

References

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

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