Longitudinal magnetoresistance in the Extreme Quantum Limit in nonparabolic semiconductors

1993

The conductivity of hot electrons in narrow-gap alloy semiconductors at low temperatures is calculated in the extreme quantum limit assuming a displaced Maxwellian distribution. The model includes the non-equipartition of phonons and the Landau-level broadening due to electron impurity interactions. It is assumed that the energy relaxation of electrons is governed by the inelastic acoustic phonon scattering via deformation potential and the mobility is limited by the acoustic phonon, ionized impurity, and alloy disorder scattering. The effect of the modified free carrier screening due to magnetic quantization is considered. The magnetic and electric field dependences of the conductivity have also been investigated.

“…Equation (1) represents the non-parabolic relation between E and k, in the parabolic approximation involving the magnetic field dependence of the band-edge effective mass [4].…”

Section: Theoretical Approachmentioning

confidence: 99%

Electrical Conductivity of Hot Electrons in Narrow‐Gap Semiconductors in the Extreme Quantum Limit at Low Temperatures

Bhaumik

1993

“…After some algebraic simplification, we then get p = Po0 + Po1 2 (8) where Po, is the energy loss rate due to transitions between the levels at n = 0, and Pol represents the transition between levels n = 0 and 1 and is given by…”

Section: Variablesmentioning

confidence: 99%

Energy Loss Rate of Hot Electrons in n‐Hg_xCd_1−xTe at High Temperatures in the Presence of a Quantizing Magnetic Field

Bhaumik

1995

The energy loss rate of hot electrons due to longitudinal polar optical phonons in narrow-gap semiconductors is calculated for the longitudinal configuration with classical and quantum screening for various lattice temperatures. The results are used to examine the influence of quantum screening on the energy loss rate. A relative comparison of the effects of quantum and classical screening on the energy loss rate due to optical phonons is made. The energy loss rate without screening is compared with the energy loss rate with classical and quantum screening.

“…The energy dispersion relation for these electrons in the nonparabolic conduction band can be written as [6] where E is the electron energy, E , the band gap, h is the Planck constant divided by 2n, nz* is the band-edge effective mass, is the nonparabolicity factor which tends to unity for large band-gap semiconductors, w, = eB/nz*, e being the electronic charge, lgl the spin-split g-factor, and rn, is the free electron mass.…”

Section: Theorymentioning

confidence: 99%

The Warm Electron Coefficient in n‐InSb in the Presence of a Quantizing Magnetic Field at Low Temperatures

Santra

1993

The warm electron coefficient (p) in n-InSb in the presence of a quantizing magnetic field at low temperature is investigated theoretically to interpret the experimental results in n-InSb at TL = 4.2 K.The theoretical model used for the calculation of b considers the displaced Maxwellian distribution for electrons and other complexities such as the band nonparabolicity, the non-equipartition of phonons, the free-carrier screening, and the Landau-level broadening. The theoretical results of b obtained by the above model are found to agree qualitatively with the experimental results taking the standard material parameters of n-InSb. T o fit the theoretical values of / 3 with the experimental values, the acoustic deformation potential constant (El) is found to be 13eV which agrees with other observations.