Longitudinal and transverse magnetoresistance in films with tilted out-of-plane magnetic anisotropy

Eden, Noga; Kopnov, G.; Fraenkel, Shachar; Goldstein, Moshe; Gerber, A.

doi:10.1103/physrevb.99.064432

Cited by 13 publications

(14 citation statements)

References 53 publications

(49 reference statements)

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“…Similar low temperature non‐monotonic behaviors observed in other systems [ 39 ] have been interpreted to arise from rotating off‐axis in‐plane domains or secondary magnetic ordering. [ 39,40,44 ]…”

Section: Figurementioning

confidence: 99%

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air‐stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, TN = 132 ± 1 K, CrSBr adopts an A‐type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is ΔE = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin‐based electronics.

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Section: Figurementioning

confidence: 99%

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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“…The inplane fraction of domains will rotate toward this easy axis at low field if the anisotropy energy is lower as compared to anisotropy energy for out of plane rotation. At higher field, domains will eventually rotate toward c axis causing increase in the MR [20]. For comparatively lower resistivity for the secondary axis direction, which is possible due to in-plane anisotropy as seen in Fig.2 (b), a minima in resistivity for H//c will occur.…”

Section: Resultsmentioning

confidence: 97%

Magnetotransport as a diagnostic of spin reorientation: Kagome ferromagnet as a case study

et al. 2019

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While in most ferro or antiferromagnetic materials there is a unique crystallographic direction, including crystallographically equivalent directions, in which the moments like to point due to spinorbit coupling, in some, the direction of the spin reorients as a function of a certain physical parameter such as temperature, pressure etc. Fe3Sn2 is a kagome ferromagnet with an onset of ferromagnetism below 650 K, and undergoes a spin reorientation near 150 K. While it is known that the moments in Fe3Sn2 point perpendicular to the kagome plane at high temperatures and parallel to the kagome plane at low temperatures, how the distribution of the magnetic domains in the two different spin orientations evolve throughout the spin reorientation is not well known. Furthermore, while there have been various reports on the magnetotransport properties in the Hall configuration, the angular dependence of magnetoresistance has not been studied so far. In this paper, we have examined the spin reorientation by using anisotropic magnetoresistivity in detail, exploiting the dependence of the resistivity on the direction between magnetization and applied current. We are able to determine the distribution of the magnetic domains as a function of temperature between 360 K to 2 K and the reorientation transition to peak at 120 K. We discover that both out of plane and in plane phases coexist at temperatures around the spin reorientation, indicative of a first order transition. Although the volume of the magnetic domains in the different phases sharply changes at the spin reorientation transition, the electronic structure for a specific magnetization is not influenced by the spin reorientation. In contrast, we observe an electronic transition around 40 K, hitherto unreported, and reflected in both the zero-field resistivity and anisotropic resistivity. Introduction:Kagome Fe3Sn2 orders ferromagnetically below a Curie temperature of TC = 640 K based on SQUID magnetometry [1]. Previous studies using Mossbauer spectroscopy reported a Curie temperature of 612 K[2] and 657 K [3]. Below the ordering temperature, the easy axis of magnetization is parallel to the crystallographic c-axis. Initial study using Mossbauer spectroscopy noticed that a transition (SRT) occurs at 114 K[2]. Following studies using Mossbauer spectroscopy suggested that below 220 K, there are abrupt spin rotations occurring over a large temperature range 0-220 K with the spin direction close to the ab Kagome plane at low temperatures [3]. Further studies investigating the spin rotation using neutron diffraction combined with Mossbauer spectroscopy noted that the rotation is more complicated than a continuous rotation described by a unique angle or a simple abrupt rotation [4].The spin reorientation transition (SRT) was recently revisited, using powder neutron diffraction, where the transition was suggested to occur over a large temperature range from 570 K to 75 K[1]. The order of the transition is not discussed in any of the previous reports and they report very broad tr...

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“…Although the AHE and PHE voltages originate from the spin-orbit coupling in FM materials [5,25,26], the OHE voltage can be observed in any conductor due to the Lorentz force exerting on electrons when an external magnetic field applied [27]. Since the OHE contribution is very small compared to the AHE and PHE at relatively low magnetic fields, the Eq.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…Ultra-thin magnetic films with tilted out-of-plane magnetic anisotropy (TMA) have recently attracted considerable attention due to their key role in technological applications [1][2][3][4][5]. The use of TMA layer as a tilted (or canted) spin polarizer in spin-transfer torque (STT) based magnetic tunnel junctions has enabled a faster switching of magnetization direction and lower power consumption [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Experimental Determination of the Orientation of Tilted Magnetic Anisotropy by Using Angle-Resolved Hall Effect Signals

Pişkin

Demirci

Öztürk

et al. 2021

J Supercond Nov Magn

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The orientation of the tilted magnetic anisotropy has crucial importance in many spintronic devices. However, it is very challenging to determine it especially in very small structures produced by lithography. Here, we propose a new experimental method to directly and accurately measure both the polar and azimuthal angles of a tilted magnetic anisotropy. By using the proposed experimental method, we have successfully determined the out-of-plane and in-plane angles of the tilted magnetic anisotropy in a micro-structured multilayer thin film. The orientation of the tilted magnetic anisotropy in the sample has also been confirmed by the theoretical simulations proving the accuracy of the method.

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Longitudinal and transverse magnetoresistance in films with tilted out-of-plane magnetic anisotropy

Cited by 13 publications

References 53 publications

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Magnetotransport as a diagnostic of spin reorientation: Kagome ferromagnet as a case study

Experimental Determination of the Orientation of Tilted Magnetic Anisotropy by Using Angle-Resolved Hall Effect Signals

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