Longitudinal and spin-valley Hall optical conductivity in single layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>

Li, Zhou; Ćarbotte, J. P.

doi:10.1103/physrevb.86.205425

Cited by 99 publications

(81 citation statements)

References 32 publications

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“…In particular, the exfoliation of MoS 2 monolayers has attracted significant interest since the realization of field-effect transistors with high on-off ratio [2]. Monolayers of MX 2 can be regarded as semiconductor analogs of graphene [3,4], resulting in similar phenomena such as spin and valley Hall effects [5,6]. Indeed, MoS 2 has a honeycomb lattice with an intrinsic direct band gap of 1 to 2 eV, which is in the visible range.…”

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confidence: 99%

“…Gap opening by off-resonant light has been predicted for graphene and the surface states of topological insulators [22] as well as for silicene [25], and has been confirmed experimentally [21]. These studies show that off-resonant light enables quantum phase transitions in two-dimensional systems.The charge carriers in MoS 2 obey a two-dimensional Diraclike Hamiltonian [5,6] with large intrinsic direct band gap and strong spin-orbit coupling (SOC). We model MoS 2 by an effective Hamiltonian in the xy plane in the presence of circularly polarized light,…”

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confidence: 99%

“…The charge carriers in MoS 2 obey a two-dimensional Diraclike Hamiltonian [5,6] with large intrinsic direct band gap and strong spin-orbit coupling (SOC). We model MoS 2 by an effective Hamiltonian in the xy plane in the presence of circularly polarized light,…”

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Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

2014

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We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS 2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides. Monolayers of the transition metal dichalcogenides MX 2 (M = Mo, W; X = S, Se) are emerging as promising materials for a wide variety of applications in nanoelectronics, due to their exceptional band structures [1]. In particular, the exfoliation of MoS 2 monolayers has attracted significant interest since the realization of field-effect transistors with high on-off ratio [2]. Monolayers of MX 2 can be regarded as semiconductor analogs of graphene [3,4], resulting in similar phenomena such as spin and valley Hall effects [5,6]. Indeed, MoS 2 has a honeycomb lattice with an intrinsic direct band gap of 1 to 2 eV, which is in the visible range. The band edge is located at the energy degenerate valleys (corners of the hexagonal Brillouin zone) [7,8].Thanks to its direct band gap, MoS 2 is suitable for optical manipulations and opens access to many optoelectronic applications [7][8][9]. It has been predicted that both valley polarization and valley coherence can be achieved by optical pumping with circularly and linearly polarized light [5,6,10]. Experimental realizations have been reported for MoS 2 and WSe 2 [11][12][13][14], suggesting that monolayers of MX 2 could be used for integrated valleytronic devices. Experiments have shown 30% to 50% valley polarization with circularly polarized light in the resonance regime [10][11][12]. Recent works on the optoelectronic properties of MoS 2 indicate that the photoresponse of externally biased phototransistors is driven by conductivity alteration upon illumination [15][16][17]. A photovoltaic effect has been reported for MoS 2 devices in contact with metallic electrodes that generate large Schottky barriers [18,19]. In addition, ultrasensitive phototransistors with improved mobility have been demonstrated in Ref. [20]. These devices show a photoresponsitivity in the 400 to 680 nm range with a maximum of 880 A/W at a wavelength of 561 nm.In contrast with the on-resonant optical induction used till now, we propose in this paper a scheme to employ off-resonant light to influence the band structure and corresponding transport properties of MX 2 monolayers, enabling 100% valley polarization. An important motivation is the development of experimental ...

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Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

2014

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“…The conditions |µ + s z M| < |∆ η,sz | and |µ+s z M| > |∆ η,sz | determine boundaries which separate different phase states. This can be examined by calculating the spin-and valley-Hall conductivity which are defined [42,43,44,45] as σ …”

Section: (D)mentioning

confidence: 99%

Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport

Mohammadi

Nia

2015

Superlattices and Microstructures

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We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin-and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized * Corresponding author. Tel.

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“…MoS 2 can be considered to some extent as a semiconductor analog of monolayer graphene 2 , showing similar phenomena as quantum valley Hall effect [3][4][5] while it is different from graphene in that spin Hall effect can be seen in addition to quantum valley Hall effect 4,5 .…”

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Topologically induced fractional Hall steps in the integer quantum Hall regime ofMoS₂

Islam

Benjamin²

2016

Nanotechnology

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The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. Especially, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.

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Longitudinal and spin-valley Hall optical conductivity in single layer MoS2

Cited by 99 publications

References 32 publications

Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport

Topologically induced fractional Hall steps in the integer quantum Hall regime ofMoS₂

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Longitudinal and spin-valley Hall optical conductivity in single layer MoS2

Cited by 99 publications

References 32 publications

Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayerMoS2

Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport

Topologically induced fractional Hall steps in the integer quantum Hall regime ofMoS2

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Topologically induced fractional Hall steps in the integer quantum Hall regime ofMoS₂