Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

Suzuki, Akira; Itoh, Tomohiro; Terakado, T.; Kasahara, K.; Asano, Kōichi; Inomoto, Y.; Ishihara, H.; Torikai, T.; Fujita, Shin

doi:10.1049/el:19870671

Cited by 53 publications

(3 citation statements)

References 3 publications

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“…In the OEIC for long-wavelength operation, In-GaAs(P)/InP-on-GaAs and GaAs-on-InP heterostmctures have been studied to overcome immature InP-based electronic device technology [38]- [42]. Fig.…”

Section: B Luttice-mismatched Oeic Technologymentioning

confidence: 99%

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OEIC technology and its application to subscriber loops

Horimatsu

Sasaki

1989

J. Lightwave Technol.

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In this paper, we review recent progress in GaAsand InPbased optoelectronic integrated circuits (OEIC's) for use in optical fiher transmission systems.We describe OEIC technology and system demonstrations for shorthaul and high-speed transmission, and discuss the problems in practical applications. We present approaches toward resolution of these problems and project future OEIC applications, especially with regard to subscriber loops.

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Section: B Luttice-mismatched Oeic Technologymentioning

confidence: 99%

“…Fig. 15 shows a cross section of the GaAs-on-InP OEIC transmitter [42]. The GaAs electronic circuit was formed in the strained heteroepitaxial GaAs layers on the InP substrate.…”

Section: B Luttice-mismatched Oeic Technologymentioning

confidence: 99%

OEIC technology and its application to subscriber loops

Horimatsu

Sasaki

1989

J. Lightwave Technol.

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“…14 InP-based lasers and detectors with fast GaAs-based electronic devices have been integrated for optical communication technologies. 15,16 Heteroepitaxial growth has been widely used for integrating dissimilar material systems. However, the heteroepitaxial growth of lattice-mismatched structures often leads to the presence of a high density of extended defects.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Chemistry of InP/GaAs Bonded Pairs

Liu

Kuech

2007

Journal of Elec Materi

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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy (AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which, in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide composition after thermal annealing shifts from In 2 O 3 to the eventual thermodynamic equilibrium product, InPO 4 .

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III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

Aboulhouda

Vilcot

Razeghi

et al. 1991

Micro & Optical Tech Letters

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It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long‐wavelength metal‐semiconductor‐metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs/GalnAs heteroepitaxy needed for the photodetector was selectively grown using a SiO2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50‐Ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.

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Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

Cited by 53 publications

References 3 publications

OEIC technology and its application to subscriber loops

OEIC technology and its application to subscriber loops

Interfacial Chemistry of InP/GaAs Bonded Pairs

III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

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