Long-wavelength InP-based quantum-dash lasers

Schwertberger, R.; Gold, D. M.; Reithmaier, J.P.; Forchel, A.

doi:10.1109/lpt.2002.1003076

Cited by 168 publications

(112 citation statements)

References 12 publications

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“…The properties of Qdot based devices have been intensely studied. 1,2 Less work has been done on InAs Qdashes grown on InP substrates, but this system also exhibits promising results 3,4 at the important wavelength around 1.55 m. An important question arises therefore as to which extent zero-dimensional Qdot properties are to be found in Qdash structures, where the gain material is wirelike ͑elongated dots͒ and thus quasi-one-dimensional. It was shown by Dery et al 5 that the gain properties of a Qdash amplifier bear the distinct fingerprint of a quantum-wire-like density of states.…”

Section: G Eisensteinmentioning

confidence: 99%

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Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55μm

Poel

Mørk

Somers

et al. 2006

Applied Physics Letters

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Section: G Eisensteinmentioning

confidence: 99%

“…3 Antireflection coatings of the device facets reduce feedback to a level below 0.1% and thus inhibit lasing. The amplified spontaneous emission ͑ASE͒ spectrum shows ground-state emission in the 1550 nm range ͑see inset of Fig.…”

Section: G Eisensteinmentioning

confidence: 99%

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55μm

Poel

Mørk

Somers

et al. 2006

Applied Physics Letters

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“…Semiconductor quantum dashes (QDashes) are selfassembled nanostructures similar to quantum dots (QDs), however strongly elongated in one of the in-plane directions [1][2][3][4][5][6][7][8]. The majority of the reports regarding such strongly asymmetric objects concern the InAs-InP (001) material system, where elongation can easily be achieved spontaneously during the growth by molecular beam epitaxy [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…The majority of the reports regarding such strongly asymmetric objects concern the InAs-InP (001) material system, where elongation can easily be achieved spontaneously during the growth by molecular beam epitaxy [2][3][4][5]. The primary motivation to fabricate and study this type of structures was their proven application potential in optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

et al. 2014

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The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes), that are quasi-zerodimensional epitaxial nanostructures with significant shape anisotropy, is investigated both experimentally and theoretically. Photoluminescence (PL) spectra of single InAs/InGaAlAs/InP (001) QDashes exhibit sidebands of the main emission peak, clearly indicating the contribution of phonon-assisted emission to the exciton luminescence, which dominates the PL line shape at higher temperatures (between 50 and 100 K, usually). By utilizing the independent boson model we perform systematic and comprehensive studies of the influence of the overall geometry of quantum confinement on this spectral feature in an uncommon quantum system. A comparison of the experimental data and the results of modeling have confirmed the existence of two types of states differing in the spatial confinement and symmetry within one sample, i.e., typical for large elongated objects or characteristic for smaller and more symmetric structures. The latter are supposed to correspond to local widenings or zigzag bends present in some of the dashes and acting as additional localization centers, which confine excitons in a much smaller volume and decrease effectively the resulting in-plane anisotropy. Those observations evidence a nontrivial spatial character of the quantum confinement in these structures. They are consistent with our previous polarization-resolved study on the QDash ensemble and correlate well with the exciton decay times, and the spectral-diffusion-dominated line broadenings at low temperatures reflecting the effect of electric field fluctuations on the excitons of a different spatial extension. Finally, we demonstrate a pronounced suppression of phonon-induced decoherence for such strongly elongated nanostructures.

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“…This is a fundamental characteristic as it should open the way for chirp-less penalty free high bit rate data transmission. Growth using molecular beam epitaxy (MBE) on (100) InP generally leads to elongated dots or so-called Quantum Dashes [6][7][8] . However, these quasi-1 D nanostructures exhibit a linewidth enhancement factor (LEF) which amounts to ~ 4-6 8,9 , similar to that of the best QW lasers.…”

mentioning

confidence: 99%