Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication Systems

The lasers behind the communications revolution

“…A long-wavelength version of this design was developed in 1980. 18 This design, along with numerous variants resulting from a proliferation of etching and crystal growth techniques, also provides for reversebiased junctions in the lateral cladding to block current leakage paths and force the current into the excitationconfining active region. As a result, this design and its descendants have provided for many of the most efficient and highest-performance lasers, routinely achieving threshold currents of I th < 10 mA and efficiencies of h d~ 0.4 W/A.…”

High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

“…In recent years, significant progress has been made on the fabrication of ultrafast fiber lasers (delivering extremely short pulses, in the order of picoseconds or femtoseconds), which have become the key element for multiple applications, such as optical communications, material processing, laser micromachining [1][2][3][4][5], etc. These reliable, flexible, and compact sources have found applications not only in industrial processes but also in the medical (biological photonics [6][7][8]) or military (radar systems [9,10]) fields.…”

Criterion for improved linearity of 1.3-µm InGaAsP-InP buried-heterostructure lasers

“…The inset is the far-field parallel to the junction at currents above and below the kink. [4]. A planar InCaAsP-InP double heterostructure is grown by liquid phase epitaxy (LPE) on a n-InP substrate, followed by BR2-CH30H etching of a V-shaped mesa and then LPE regrowth.…”