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INTRODUCTIONSince the concept of infrared (IR) photodetection by intersubband absorption in superlattices was first proposed and demonstrated by Smith et al.(1), the field of intersubband physics and applications has grown and attracted an increasing interest. Along with the demonstration and the analysis of intersubband absorption(2), came the possibility of studying a very basic quantum system in the laboratory. These efforts revealed the richness of intertweened basic physical effects that have to be understood or taken into account for the full mastering of intersubband physics and applications: Stark (3), depolarization (4, 5) and other energy shifts, exchange interactions in doped quantum wells(6), effects of real material systems, polarization(7) and parity selection rules -just to name a few. On the application side another important channel of interest was opened with the realization that very large optical nonlinearities could be achieved through intersubband transitions in superlattices (8-10) .In the same time the understanding of infrared photodetection by intersubband and bound-to-continuum transitions has been deepened and carried to new promising frontiers in a relatively short time; many additional features of these detectors including some relevant to users' needs, have been addressed and investigated: wide-band response(1l), grating-assisted frontal detection schemes (12, 13) (to overcome basic selection rules limitations), photoconductive gains(14), tunability of the wavelength of detection (15), are just a few of the issues that have been undertaken and partially resolved. Most notably detectors presenting very respectable performances in terms of responsivity, noise figures and, ultimately, detectivity, have been demonstrated mainly in the GaAs/AlGaAs system(16). Tipical wavelengths of detection in this material include the athmospheric window 8-12 ~m and the range of detection can be pushed up and down a few microns by different techniques(17,18),or by using different, yet compatible material systems. The time has quickly come when, considering such demonstrated performances and thriving on the advantages of the mature, reliable and integrable GaAs material technology, hopes have arisen for the possibility of fabricating focal staring Intersubband Transitions in Quantum WellsEdited by E. Rosencher et oJ., Plenum Press, New York, 1992 15arrays with acceptable performances for many applications; and questions need be asked about the performances of (GaAs) multi quantum well detectors per se and with respect to other materials(19) and/or other schemes, including the Mercury-CadmiumTelluride (HgCdTe) system, which has been considered for years the natural choice for many applications in the wavelength range described above.Many are the issues involved when one tries to compare between different technologies and different schemes of detection: these include the preparation of materials, the maturity, reliability and integrability of the technology, the capability of fabricating large arrays at h...
INTRODUCTIONSince the concept of infrared (IR) photodetection by intersubband absorption in superlattices was first proposed and demonstrated by Smith et al.(1), the field of intersubband physics and applications has grown and attracted an increasing interest. Along with the demonstration and the analysis of intersubband absorption(2), came the possibility of studying a very basic quantum system in the laboratory. These efforts revealed the richness of intertweened basic physical effects that have to be understood or taken into account for the full mastering of intersubband physics and applications: Stark (3), depolarization (4, 5) and other energy shifts, exchange interactions in doped quantum wells(6), effects of real material systems, polarization(7) and parity selection rules -just to name a few. On the application side another important channel of interest was opened with the realization that very large optical nonlinearities could be achieved through intersubband transitions in superlattices (8-10) .In the same time the understanding of infrared photodetection by intersubband and bound-to-continuum transitions has been deepened and carried to new promising frontiers in a relatively short time; many additional features of these detectors including some relevant to users' needs, have been addressed and investigated: wide-band response(1l), grating-assisted frontal detection schemes (12, 13) (to overcome basic selection rules limitations), photoconductive gains(14), tunability of the wavelength of detection (15), are just a few of the issues that have been undertaken and partially resolved. Most notably detectors presenting very respectable performances in terms of responsivity, noise figures and, ultimately, detectivity, have been demonstrated mainly in the GaAs/AlGaAs system(16). Tipical wavelengths of detection in this material include the athmospheric window 8-12 ~m and the range of detection can be pushed up and down a few microns by different techniques(17,18),or by using different, yet compatible material systems. The time has quickly come when, considering such demonstrated performances and thriving on the advantages of the mature, reliable and integrable GaAs material technology, hopes have arisen for the possibility of fabricating focal staring Intersubband Transitions in Quantum WellsEdited by E. Rosencher et oJ., Plenum Press, New York, 1992 15arrays with acceptable performances for many applications; and questions need be asked about the performances of (GaAs) multi quantum well detectors per se and with respect to other materials(19) and/or other schemes, including the Mercury-CadmiumTelluride (HgCdTe) system, which has been considered for years the natural choice for many applications in the wavelength range described above.Many are the issues involved when one tries to compare between different technologies and different schemes of detection: these include the preparation of materials, the maturity, reliability and integrability of the technology, the capability of fabricating large arrays at h...
The nonlinear optical and transport properties of a nipi-doped InxGa1−xAs/GaAs multiple-quantum well sample (x=0.23) has been studied using a novel approach called electron-beam-induced absorption modulation (EBIA). The absorption in the sample is modulated as a result of screening of the built-in electric field in the nipi structure due to excess carrier generation. The change in field causes a Stark shift of the first quantized optical transitions in QWs which are situated in the intrinsic layers. In EBIA, a scanning electron probe is used to locally generate an electron–hole plasma that is used to study the spatial distribution of defects that impede excess carrier transport and reduce the lifetime of spatially separated carriers. The Stark shift in the MQW structure is imaged with micrometer-scale resolution and is compared with cathodoluminescence imaging results which show dark line defects resulting from strain-induced misfit dislocations. Theoretical calculations using Airy functions in the transfer-matrix method with a self-consistent field approximation were used to determine the energy states, wave functions, and carrier recombination lifetimes of the MQW as a function of the built-in field. A quantitative phenomenological analysis is employed to determine the built-in field, excess carrier lifetime, and ambipolar diffusion coefficient as a function of the excitation density. The defects are found to create potential barriers and recombination centers which impede transport and markedly reduce the excess carrier lifetime.
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