Long-throw low-pressure sputtering technology for very large-scale integrated devices

Motegi, Nobuhiro; Kashimoto, Y.; Nagatani, Koji; Takahashi, Seiichi; Kondo, Tomoyasu; Mizusawa, Yasushi; Nakayama, Izumi

doi:10.1116/1.587833

Cited by 40 publications

(9 citation statements)

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“…Long throw sputtering is technique used to control the angular distribution [17]. In standard sputtering configurations, (2).…”

Section: Resultsmentioning

confidence: 99%

“…The conventional sputtering has a wider angular distribution of arrival atoms that induces a pinch-off of the barrier and the seed layers at the top, producing a nonconformal film profile with the poor coverage at the bottom and the side of vias [4,5]. To obtain a conformal film in the high aspect ratio via structure, the angular flux of the sputtered Cu toward to the bottom of the deep via needs to be enhanced to produce a relatively thick film at the contact bottom [6]. As the distance between target and substrate increases, the range of the angle of the atomic flux that is reaching the substrate is decreased naturally such that the deposition can be added to the bottom of the structure [7,8].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System

Shin

Kim

Park³

et al. 2019

Korean J. Met. Mater.

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In this work, the angular distribution of the sputtered Cu flux in a long throw sputtering (LTS) system is extracted from the comparison of experimentally-measured profiles of deposited films with simulated profiles of films in overhang contact structure. And effects of the sputtering process parameters such as Ar pressure during sputtering, RF power on substrates, and DC power on Cu target are investigated for a DC magnetron sputtering system with LTS. The bottom step coverage in contact is enhanced with decreasing operating pressure and is increased with increasing substrate RF power up to 200 W. However, the bottom step-coverage was reduced with substrate RF power above 400 W, possibly due to the re-sputtering effect of the deposited Cu films. DC power on Cu target does not affect the angular distribution of Cu atoms while the overall deposition rate is increased. Based on the estimated angular distribution of sputtered Cu flux, the profile of Cu film is deposition on a deep via of aspect ratio 10 and compared to the simulation of the film profile that shows a good agreement.

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“…Long throw sputtering is technique used to control the angular distribution [17]. In standard sputtering configurations, (2).…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System

Shin

Kim

Park³

et al. 2019

Korean J. Met. Mater.

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“…The excess Au thin film on the sidewall was also transfer-printed to form the burr. This type of burr formation can be reduced by using a long throw sputter, a collimated sputter, or a reverse taper stamp for Au deposition (Rossnagel et al, 1991) (Motegi et al, 1995).…”

Section: Electrostatic Driving Of Au Au/go and Au/go/au Microbeamsmentioning

confidence: 99%

Transfer and inkjet printing of gold thin film and graphene oxide nanoparticles for micro-oscillators

KASUGA

MASUDA

et al. 2023

JAMDSM

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This study presents the results of micro-oscillator fabrication using the transfer printing (TP) of gold (Au) thin films and inkjet printing of graphene oxide (GO) nanoparticles. The Au thin films are formed into a doublesupported microbeam to function as a micro-oscillator on a polymer substrate. The Au microbeams have a thickness of 300 nm and a length of 250 or 300 µm. To improve adhesion strength between the substrate and the Au thin film, the Au thin film is transferred and printed onto a substrate pre-coated with a 30-nm-thick Au surface via atomic diffusion bonding. Furthermore, GO nanoparticles are deposited on the transfer-printed Au thin film and the convex part of the stamp using inkjet printing to enhance the mechanical properties of the microoscillator. The former deposition forms a double-layered beam of Au and GO. The Au/GO/Au-layered microbeam is fabricated on a pre-structured substrate by TP after another Au thin film is then deposited on this GO/Au surface. These micro-oscillators can be driven by electrostatic force at less than 10 kHz with 90-210 V of applied voltage, while the deflection of the micro-oscillator is measured by a laser displacement meter. The Au micro-oscillators have a damping ratio of 0.166, and a resonance frequency of 0.28 kHz. This resonance frequency is smaller than that estimated by finite element method analysis. This difference in resonance frequency is attributed to the Young's modulus of the Au thin film and structural defects due to van der Waal bonding. The modulus of the laminated thin film of Au and GO nanoparticles is higher than that of the Au thin film.

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“…In addition to pre-sputter cleaning, to improve deposition coverage, alternate physical deposition methods can be used when available, such as back-sputtering, collimated sputtering [24], long-throw sputtering [25] and ionized PVD [26]. These techniques can also be combined with a forced reflow method for even more complete via fill [27].…”

Section: Via Resistance Measurementsmentioning

confidence: 99%

A dry wafer-reconstitution process with zero insertion force by embedded alignment guide tabs

Chen¹,

Provine²,

Klejwa³

et al. 2012

J. Micromech. Microeng.

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We demonstrate embedding of chiplets into wafers to bypass the monolithic integration challenges of combining micro-mechanical devices with active circuitry. Dry alignment is provided by passive guide tabs, which are created through polysilicon refill of frontside etched trenches. The guide tabs are compatible with further processing on the wafer. Precision chiplets are created by through-wafer etching. After chiplet drop-in, optical detection provides feedback of chiplet jamming, and horizontal driving of the chiplets finishes the zero insertion force assembly process. We demonstrate less than 2.5 μm of chiplet to substrate alignment error. Theoretical scaling of alignment accuracy reaches numbers comparable to photolithography, allowing high density interconnects for heterogeneous integration without precision manipulators.

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Long-throw low-pressure sputtering technology for very large-scale integrated devices

Cited by 40 publications

References 0 publications

Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System

Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System

Transfer and inkjet printing of gold thin film and graphene oxide nanoparticles for micro-oscillators

A dry wafer-reconstitution process with zero insertion force by embedded alignment guide tabs

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