Long-Term Spectral Responsivity Stability of Predictable Quantum Detectors

Porrovecchio, G.; Šmíd, Marek; Werner, Lutz; Johannsen, Uwe; Linke, Ulrike

doi:10.25039/x46.2019.op58

Cited by 4 publications

(5 citation statements)

References 2 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They show excellent repeatability of ⁓0.0016% [1]. The stability of the PQEDs is also excellent as reported in [8], where no change in responsivity is observed over 8 years within the measurement uncertainty of about 0.01%. In this work, we present an optical power and spectral responsivity scale realization based on a PQED.…”

Section: Introductionsupporting

confidence: 68%

See 1 more Smart Citation

Optical power scale realization using the predictable quantum efficient detector

Maham

Kärhä

Manoocheri

et al. 2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

We report realization of scales for optical power of lasers and spectral responsivity of laser power detectors based on a predictable quantum efficient detector (PQED) over the spectral range of 400 nm–800 nm. The PQED is characterized and used to measure optical power of a laser that is further used in calibration of the responsivities of a working standard trap detector at four distinct laser lines, with an expanded uncertainty of about 0.05%. We present a comparison of responsivities calibrated against the PQED at Aalto and the cryogenic radiometer at RISE, Sweden. The measurement results support the concept that the PQED can be used as a primary standard of optical power.

show abstract

Section: Introductionsupporting

confidence: 68%

“…The comparison results deviate more at the wavelength of 458 nm than at 514 nm, 543.5 nm, or 633 nm. This may be because of high temporal instability of the Hamamatsu trap detectors at wavelengths below 476 nm [8]. Overall, the results indicate the usability of the PQED as a primary standard of optical power.…”

Section: Discussionmentioning

confidence: 77%

Optical power scale realization using the predictable quantum efficient detector

Maham

Kärhä

Manoocheri

et al. 2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…The responsivity estimates of the reference PQED are validated via another PQED with measurements against a cryogenic radiometer [ 6 ]. The temporal stability of the reference PQED was confirmed by responsivity measurements over a period of almost ten years [ 37 ].…”

Section: Pqed Assembly and Test Resultsmentioning

confidence: 99%

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Koybasi

Nordseth

Tran

et al. 2021

Sensors

View full text Add to dashboard Cite

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.

show abstract

“…The PQED has therefore been included in the mise-en-pratique for the definition of the candela [8] as one possible primary standard based on a different technology than the most commonly used cryogenically cooled electrical substitution radiometer [9]. The responsivity of PQED has shown to be extremely stable with an undetectable drift over ten years [10] in the comparison to high accuracy cryogenic radiometers. At the lowest uncertainty levels, below 100 ppm, potential drift in the photodiodes responsivity due to the change in the IQD is hard to measure.…”

Section: Introductionmentioning

confidence: 99%

Determination of the responsivity of a predictable quantum efficient detector over a wide spectral range based on a 3D model of charge carrier recombination losses

et al. 2022

Self Cite

View full text Add to dashboard Cite

We present a method to determine the internal quantum deficiency (IQD) of a predictable quantum efficient detector (PQED) based on measured photocurrent dependence on bias voltage and a 3D simulation model of charge carrier recombination losses. The simulation model of silicon photodiodes includes wafer doping concentration, fixed charge of SiO2 layer, bulk lifetime of charge carriers and surface recombination velocity as the fitted parameters. With only one set of physical photodiode defining parameters, the simulation shows excellent agreement with experimental data at power levels from 100 µW to 1000 µW with variation in illumination beam size. We could also predict the dependence of IQD on bias voltage at the wavelength of 476 nm using photodiode parameters determined independently at 647 nm wavelength. The fitted values of doping concentration and fixed charge extracted from the simulation model are in close agreement with the expected parameter values determined earlier. At bias voltages larger than 5 V at the wavelength of 476 nm, the internal quantum efficiency of one of the tested PQEDs is measured to be 0.999970 ± 0.000027, where the relative expanded uncertainty of 0.000027 is one of the lowest values ever achieved in spectral responsivity measurement of optical detectors.

show abstract

Long-Term Spectral Responsivity Stability of Predictable Quantum Detectors

Cited by 4 publications

References 2 publications

Optical power scale realization using the predictable quantum efficient detector

Optical power scale realization using the predictable quantum efficient detector

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Determination of the responsivity of a predictable quantum efficient detector over a wide spectral range based on a 3D model of charge carrier recombination losses

Contact Info

Product

Resources

About