Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films

Abstract

Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H2, N2, O2, H2O, and NH2) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH2 are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air.

From Stable Radicals to Thermally Robust High-Spin Diradicals and Triradicals

“…1 nm) on silicon substrates which remain unchanged after exposure to air for at least 18 h�a testament to its thermal ultrarobustness. 150,414…”

“…Notably, this diradical can be evaporated under UHV to obtain thin films (nominal thickness of ca. 1 nm) on silicon substrates which remain unchanged after exposure to air for at least 18 ha testament to its thermal ultrarobustness. , …”