2022
DOI: 10.1038/s41467-022-31569-w
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Long-range charge carrier mobility in metal halide perovskite thin-films and single crystals via transient photo-conductivity

Abstract: Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques. For nanosecond to millisecond transient methods, early-time re… Show more

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Cited by 59 publications
(44 citation statements)
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“…In the TPC experiment, transistor‐type electrode‐gap devices, which probe the transport in a direction parallel to the plane of the substrate, are illuminated with a short (ns) above band gap laser pulse, and the transient conductivity is recorded. [ 21 ] We give full details in the Supporting Information, but briefly, during and following the photoexcitation pulse, free carriers are generated which result in the photoconductivity signal. In 3D bulk perovskites, where exciton binding energies are low, we often expect that all of the absorbed photons lead to the generation of free carriers.…”
Section: Resultsmentioning
confidence: 99%
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“…In the TPC experiment, transistor‐type electrode‐gap devices, which probe the transport in a direction parallel to the plane of the substrate, are illuminated with a short (ns) above band gap laser pulse, and the transient conductivity is recorded. [ 21 ] We give full details in the Supporting Information, but briefly, during and following the photoexcitation pulse, free carriers are generated which result in the photoconductivity signal. In 3D bulk perovskites, where exciton binding energies are low, we often expect that all of the absorbed photons lead to the generation of free carriers.…”
Section: Resultsmentioning
confidence: 99%
“…An assumption of ϕ = 1 for FA 0.9 Cs 0.1 PbI 3 is valid for N < 10 16 cm –3 and corrections only need to be made for higher N , as has been described in previous work. [ 21 ]…”
Section: Resultsmentioning
confidence: 99%
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