1996
DOI: 10.1103/physrevb.54.r17280
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Long-mean-free-path ballistic hot electrons in high-purity GaAs

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Cited by 17 publications
(16 citation statements)
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“…These requirements have already been achieved. Examples include graphene/hBN [20][21][22], and GaAs [23].…”
mentioning
confidence: 99%
“…These requirements have already been achieved. Examples include graphene/hBN [20][21][22], and GaAs [23].…”
mentioning
confidence: 99%
“…In order to get transmission enhancement by two layers, electron propagation between the layers should be ballistic. Therefore, we consider the separation of the layers L = 80 nm, which is comparable to the mean free path of the electrons in GaAs/AlGaAs superlattices 61 and considerably smaller compared to pure GaAs samples 62 . We take the electron energy to be 20 meV for which case kr eff ≪ 1 (r eff is estimated using the Van der Waals length~0.2 nm), allowing us to apply the theory developed in this paper.…”
Section: Discussionmentioning
confidence: 99%
“…Определение этой величины является нетривиальной задачей и выходит за рамки настоящей работы. Отметим только, что в работе [54] было показано, что в достаточно чистых образцах GaAs при температуре жидкого гелия величина l может достигать 3 µm. При таком значении среднего свободного пробега электрона условие (14) не выполняется для всех рассмотренных нами значений L, и полученные выше результаты остаются в силе.…”
Section: результаты и обсуждениеunclassified