Long-lived quantum coherence in a two-level semiconductor quantum dot

Abo-Kahla, D. A. M.

doi:10.1007/s12043-020-1932-y

Cited by 9 publications

(1 citation statement)

References 77 publications

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“…Presently, cuttingedge research in the EIG field is focused on implementing gratings within optical parity-time symmetric cold atomic media, thereby producing an asymmetric diffraction pattern [23,[31][32][33]. In recent times, semiconductor nanostructure devices, including quantum dots and quantum wells, have been considered as noteworthy candidates for controlling and manipulating optical properties, despite atomic systems being satisfactory alternatives [34][35][36][37][38][39][40][41][42]. These devices hold great promise in the world of micro-and nanotechnologies.…”

Section: Introductionmentioning

confidence: 99%

Efficient two-dimensional Fraunhofer diffraction pattern via electron spin coherence

Meddour,

Askar,

Dehraj

et al. 2023

Laser Phys.

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In this letter, we have discussed the two-dimensional diffraction pattern via electron spin coherence in a GaAs quantum dot. Impulsive stimulated Raman excitation utilizing coherent optical fields is employed for the purpose of regulating the electron spin coherence within a charged ensemble of GaAs quantum dots, by means of an intermediate charged exciton (trion) state. We show that for the coupling two-dimensional standing wave (SW) field in the x and y directions, the two-dimensional Fraunhofer pattern can be formed for a weak probe light. By using the experimental parameters and controlling the Rabi frequency of the SW field and relative phase between applied lights, the symmetry and asymmetry diffraction pattern are obtained for the weak probe light due to the four-wave mixing mechanism. Our proposed model may have potential applications in high-capacity optical communications and quantum information technologies.

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