Long lasting phosphorescence in oxygen-deficient zinc–boron-germanosilicate glass–ceramics

Geng, Li; Dong, Guoping; Tan, Dezhi; Liu, Xiaofeng; Zhang, Qiang; Chen, Danping; Qiu, Jianrong; Zhao, Quanzhong; Xu, Zhizhan

doi:10.1016/j.jallcom.2010.05.080

Cited by 21 publications

(9 citation statements)

References 21 publications

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“…According to the principle of fluorescence spectroscopy, the characteristic luminescence occurs when the excited state of electrons decays radioactively to the ground state, accompanying with recombination of exited electron from conduction band and the holes in valence band. 62 Accordingly, the stronger peak intensity in the PL spectrum means a higher charge recombination. It is noted the PL measurement was conducted in the same Na 2 SO 4 solution as the PEC tests, which can simulate the real working situation for the three photocatalysts.…”

Section: Resultsmentioning

confidence: 99%

“…This agrees with the finding that the luminescence intensity of a luminescence center in an amorphous phase is much weaker than that in a crystal phase. 62 The existence of abundant dangling bonds and defects in amorphous nanowires may serve as effective electron traps, preventing recombination of electrons and holes. Accordingly, for amorphous ZSGO nanowire arrays with a narrower bandgap and weaker fluorescence, more effective photoinduced charge generation with less recombination occurs under light irradiation, giving rise to more active holes and electrons compared with crystalline ZGO or ZGSO nanowire powders (scheme in Figure 5c).…”

Section: Resultsmentioning

confidence: 99%

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Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Zhang

Mao

et al. 2016

ACS Nano

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Semiconductor nanowires that have been extensively studied are typically in a crystalline phase. Much less studied are amorphous semiconductor nanowires due to the difficulty for their synthesis, despite a set of characteristics desirable for photoelectric devices, such as higher surface area, higher surface activity, and higher light harvesting. In this work of combined experiment and computation, taking Zn2GeO4 (ZGO) as an example, we propose a site-specific heteroatom substitution strategy through a solution-phase ions-alternative-deposition route to prepare amorphous/crystalline Si-incorporated ZGO nanowires with tunable band structures. The substitution of Si atoms for the Zn or Ge atoms distorts the bonding network to a different extent, leading to the formation of amorphous Zn1.7Si0.3GeO4 (ZSGO) or crystalline Zn2(GeO4)0.88(SiO4)0.12 (ZGSO) nanowires, respectively, with different bandgaps. The amorphous ZSGO nanowire arrays exhibit significantly enhanced performance in photoelectrochemical water splitting, such as higher and more stable photocurrent, and faster photoresponse and recovery, relative to crystalline ZGSO and ZGO nanowires in this work, as well as ZGO photocatalysts reported previously. The remarkable performance highlights the advantages of the ZSGO amorphous nanowires for photoelectric devices, such as higher light harvesting capability, faster charge separation, lower charge recombination, and higher surface catalytic activity.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Zhang

Mao

et al. 2016

ACS Nano

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“…These materials are drawing more attention and the persistent luminescence has been achieved in many new kinds of materials, i.e. Tb 3+ doped CaZnGe 2 O 6 [3], Eu 2+ and Re (Re: Rare earth) codoped Ba 2 ZnSi 2 O 7 [4], zinc-boron-germanosilicate glass-ceramics [5]. All these reveal the considerable potential applications of persistent luminescence materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the enhancement and the suppression of persistent luminescence of Re3+ doped Sr2EuMgSi2O7 (Re=Dy, Yb)

Chen

et al. 2011

Journal of Alloys and Compounds

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“…10c and d shows a straight line ( pink line), which reveals a tunnelling process of electrons transferring from defects to the Tm 3+ centre in ZPOT. 4,33,34 However, the I −1 ∼ t curves for ZPOT:0.02M slightly deviate from a straight line, especially for the 625 nm emission decay curve beyond 400 s, as shown in Fig. 10a and b.…”

Section: Resultsmentioning

confidence: 90%

Tunable long lasting phosphorescence due to the selective energy transfer from defects to luminescent centres via tunnelling in Mn2+ and Tm3+ co-doped zinc pyrophosphate

et al. 2014

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A series of new phosphors Zn2(0.97-x)P2O7:0.06Tm(3+),2xMn(2+) (0 ≤ x ≤ 0.05) were synthesized and their luminescence properties were investigated. The results showed that the defects in all the phosphors were related to Tm(3+), and Mn(2+) merely served as the emission centres. Tm(3+) also acted as an emission centre and yielded blue phosphorescence corresponding to its characteristic f-f emissions in the phosphors where the Mn(2+) concentration was low (x ≤ 0.001), while in the phosphors with high concentrations of Mn(2+) it mainly served as a defect by forming Tm. The electrons thermally released from defects selectively transferred to Mn(2+) centres mainly through thermally-assisted tunnelling and this resulted in their red to near-infrared phosphorescence. By adjusting the ratio of Mn(2+) to Tm(3+) to control the spectral distribution, tunable long lasting phosphorescence from blue to near-infrared was achieved.

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Long lasting phosphorescence in oxygen-deficient zinc–boron-germanosilicate glass–ceramics

Cited by 21 publications

References 21 publications

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Investigation on the enhancement and the suppression of persistent luminescence of Re3+ doped Sr2EuMgSi2O7 (Re=Dy, Yb)

Tunable long lasting phosphorescence due to the selective energy transfer from defects to luminescent centres via tunnelling in Mn2+ and Tm3+ co-doped zinc pyrophosphate

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