Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metal-metal resonators

Abstract

Articles you may be interested inDouble metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24μm Appl. Phys. Lett. 105, 121115 (2014); 10.1063/1.4896542 High temperature, single mode, long infrared (λ=17.8μm) InAs-based quantum cascade lasers Appl. Phys. Lett. 105, 111118 (2014); 10.1063/1.4895763 Room-temperature operation of 3.6 μ m In 0.53 Ga 0.47 As / Al 0.48 In 0.52 As quantum cascade laser sources based on intracavity second harmonic generation Appl. Phys. Lett. 97, 141103 (2010); 10.1063/1.3491219 In 0.68 Ga 0.32 As ∕ Al 0.64 In 0.36 As ∕ In P 4.5 μ m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers

“…These values for facet reflectivity and waveguide losses are similar to our previous results in Ref. 3. FP laser ridge resonators have been fabricated in a metal-metal waveguide geometry using the same protocol as in Ref.…”

“…1,2 As shown in Ref. 3, the low electronic effective mass in the InAs wells leads to extremely low threshold current densities and almost room-temperature (RT) operation at k > 19 lm. We have also shown that in this wavelength range metal-metal (MM) waveguides, 4 which are typically employed for THz lasers, 8 are very efficient and yield reasonable far-fields (FFs), contrary to what is experienced at THz frequencies.…”

“…The latter modification has been introduced in order to increase the maximum current density, since the limited dynamical range was a limiting factor for the maximum operating temperature (T max ) in our previous structure design. 3 As described in Ref. 12, the maximum current flow through the injection barrier can be partially controlled by the minimum energy splitting (X) between the ground state of the injector and the upper level of the radiative transition.…”

“…FP laser ridge resonators have been fabricated in a metal-metal waveguide geometry using the same protocol as in Ref. 3. The optoelectronic characterisation of a typical FP laser in pulsed mode is reported in Fig.…”

Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy

“…There has been a considerable academic and technological interest in (a) the epitaxial growth of III–V zinc‐blende (zb) type indium pnictides (e.g., InP, InAs, and InSb) and their alloys (e.g., InSb x (P x )As 1 − x ), (b) characterizing them with spectroscopic techniques, and (c) providing rapid feedback of their optical/electrical characteristics. Although InAs has exhibited important applications to engineer high speed electronics including low power field effect transistors and long‐wavelength photonic devices, the binary InSb and its ternary InSb x (P x )As 1 − x alloys are proven valuable alternatives to mercury cadmium telluride based 8–14 μm infrared (IR) detectors . For preparing appropriate structures to optimize device performance, it is essential to have an accurate knowledge of the site selectivty of n‐ and p‐type dopants .…”