Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing
Hyogeun Park,
Dongyeol Ju,
Chandreswar Mahata
et al.
Abstract:In this study, the resistive switching phenomenon and synaptic mimicry characteristics of an indium tin oxide (ITO)/indium zinc oxide (IZO)/Al2O3/TaN device are characterized. The insertion of a thin Al2O3 layer via atomic layer deposition improves the resistive switching characteristics such as cycle‐to‐cycle and device‐to‐device uniformity and reduces the power consumption of the proposed device with respect to a single‐layer ITO/IZO/TaN device. The proposed device exhibits the coexistence of volatile and no… Show more
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