2018
DOI: 10.1109/tcad.2017.2750064
|View full text |Cite
|
Sign up to set email alerts
|

Logic Synthesis for RRAM-Based In-Memory Computing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
29
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 45 publications
(31 citation statements)
references
References 27 publications
0
29
0
Order By: Relevance
“…In [42][43][44], majority gate is implemented in RRAM array (1S-1R) by applying two inputs of the majority gate as voltages at W L and BL of the array (the third input being the initial state of the RRAM) and the output is the new non-volatile state of the device. Hence this way of implementing majority can be called V-R logic, though in the strict sense, it should be VandR-R logic since the third input is resistance (initial state of the RRAM).…”
Section: V-r Majority Logicmentioning
confidence: 99%
See 2 more Smart Citations
“…In [42][43][44], majority gate is implemented in RRAM array (1S-1R) by applying two inputs of the majority gate as voltages at W L and BL of the array (the third input being the initial state of the RRAM) and the output is the new non-volatile state of the device. Hence this way of implementing majority can be called V-R logic, though in the strict sense, it should be VandR-R logic since the third input is resistance (initial state of the RRAM).…”
Section: V-r Majority Logicmentioning
confidence: 99%
“…A comparison between V-R logic and R-V logic is presented pictorially in Figure 4. In the V-R implementation [42][43][44] in memory, the inputs of the majority gate are applied as voltages at W L/BL. This manner of computation complicates the row/column decoders of the memory array, which were conventionally used to select rows/columns.…”
Section: mentioning
confidence: 99%
See 1 more Smart Citation
“…One of the most promising approaches in this field is hybrid Nano/CMOS technology. This is due to the unique characteristics of Memristors such as being capable of scaling to Nano-metric sizes [5][6][7][8][9] and having a very fast response time [10].…”
Section: Introductionmentioning
confidence: 99%
“…A diversity of Memristor devices based on resistance switching property exist, which use different materials and algorithms [7][8][9]. The Memristors arrays are used in a variety of today's electronic circuits [10][11][12][13][14][15][16][17][18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%