Locking bandwidth of optically injected Fabry–Perot semiconductor lasers for high injection strengths

Stolz, C.A.; Labukhin, D.; Zakhleniuk, N. A.; Adams, Matthew

doi:10.1049/iet-opt:20080029

Cited by 13 publications

(3 citation statements)

References 22 publications

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“…Before investigating the modulation response of the TLD, we first produce the stable locking boundary map for our device which separates the stable locking region from chaotic or quasi‐chaotic regions. There have already been several studies devoted to the investigation of various regimes of non‐linear dynamics of optically injected TLDs [4, 23]. Here we are not interested in producing a detailed stability map, for our purpose we just need to reliably identify the region of stable locking.…”

Section: Modulation Dynamics Of Oil Tldmentioning

confidence: 99%

“…In this model the time is in essence a discrete quantity which is measured in units of a round‐trip time of the cavity. Comparative analysis of the rate equation and the Fabry–Perot model under optical injection is given in [23]). The other approach is the travelling wave model which considers spatio‐temporal effects inside of the SL cavity.…”

Section: Introductionmentioning

confidence: 99%

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Modulation dynamic response of optical‐injection‐locked wavelength‐tunable semiconductor laser diodes

Duzgol

Kyritsis

Zakhleniuk

2017

IET Optoelectronics

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Section: Modulation Dynamics Of Oil Tldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modulation dynamic response of optical‐injection‐locked wavelength‐tunable semiconductor laser diodes

Duzgol

Kyritsis

Zakhleniuk

2017

IET Optoelectronics

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“…The proposed model is valid to any type of SLD which carrier density rate equation may be assumed/adapted as in Eq. (11) below and at any value temperature degree within the range of 25-85°C. In addition, the external injection currents are assumed corresponding to the constant value of I th [i.e.…”

Section: Introductionmentioning

confidence: 98%

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

Ab-Rahman

Hassan

2010

Opto-Electronics Review

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Temperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

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The combined effect of temperature of operation and external optical feedback on the turn-on time delay of semiconductor laser diodes

Ab-Rahman

Hassan

2011

Optik

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Locking bandwidth of optically injected Fabry–Perot semiconductor lasers for high injection strengths

Cited by 13 publications

References 22 publications

Modulation dynamic response of optical‐injection‐locked wavelength‐tunable semiconductor laser diodes

Modulation dynamic response of optical‐injection‐locked wavelength‐tunable semiconductor laser diodes

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

The combined effect of temperature of operation and external optical feedback on the turn-on time delay of semiconductor laser diodes

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