Localized States in GaAs/Ga1-XAlxAs Multi-Quantum-Wells

Elamri, Fatima Zahra; Falyouni, Farid; Tahri, Zakaria; Bria, Driss

doi:10.1007/978-981-13-1405-6_18

Cited by 3 publications

(2 citation statements)

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“…8a-b) and based on the results of Fig. 7b,-c, we found that the presence of a single material defect cause the creation of one single branch ( black branch), although such defect induces normally two electronic states [18]. This behvior can be explained by the fact that the second black branch has the same energy value as the red branch induced by the presence of the second defect ( the geo-material defect).…”

Section: Resultsmentioning

confidence: 63%

“…We can usually introduce three types of defects, from those inserted in MQWs, we have geometric, geo-material and material defects [12,13,14,15]. Additionally, in our previous works [16,17,18], we have investigated the effects of placing defects of the same type-geometric or material-in differente positions. We discovered that the formation of electronic localized states inside the gaps is significantly influenced by the position of the defect.…”

Section: Introductionmentioning

confidence: 99%

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Electronic Localized States Behaviour in a GaAs/GaAlAs Multi-Quantum Wells with a Geo-Material and a Material Defects

Elamri,

Falyouni,

Bria

2023

SSP

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This paper represents a theoretical study of the transmission and the electronic band structure for a GaAs/GaAlAs Multi-quantum wells, containing two defect layers: a geo-material and a material defect layer. The variation of the different physical parameters ( i.e the transmission rate and the energy of the eigen states) as a function of the defect layers nature, is carefully investigated using the Green’s function method. Due to the presence of the defect layers, localized electronic states appeared and their properties have been studied. Our results show that both the position and the thickness of the defect layers can play an important role in the creation of well-defined localized electronic states inside the band gaps, in order to favor the transfer of electrons, without using a higher energy. Furthermore, we were able to identify the origin of each of the states appearing inside the band gaps, whether they are induced by the geo-material or by the material defect.

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Section: Resultsmentioning

confidence: 63%