Localized States in Disordered Lattices

Mott, N. F.; Allgaier, R. S.

doi:10.1002/pssb.19670210135

Cited by 79 publications

(26 citation statements)

References 34 publications

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“…It has been reported that the distribution of mid-gap states resulting from alloy disorder commonly take the form of an exponential tail 44–46 , which has previously been observed in GaAsBi alloys 32,47 . On the other hand, there is evidence that suggests a Gaussian distribution of localised states extending from the mobility edge may better describe the LDOS in GaAsBi 27,33 .…”

Section: Presentation and Discussion Of Resultsmentioning

confidence: 78%

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Wilson

Hylton

Harada

et al. 2018

Sci Rep

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A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented using power and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift in the peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrier localisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to the filling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperature presents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore, a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates the presence of two Gaussian-like distributions making up the density of localised states. These components are attributed to the presence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formation of Bi related point defects, resulting from low temperature growth.

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Section: Presentation and Discussion Of Resultsmentioning

confidence: 78%

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Wilson

Hylton

Harada

et al. 2018

Sci Rep

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“…A key factor in titania's photocatalytic ability is its high surface area, the same property that contributes to its optical properties. A high surface area leads to a higher density of localised states, which involve electrons with energies between the conduction band and valence band [62]. These electrons are present owing to terminated and unsaturated bonds on the surfaces, and these localised states provide beneficial charge separation in the form of trapping sites for photo-generated charge carriers [63].…”

Section: Photocatalytic Effectmentioning

confidence: 99%

Review of the anatase to rutile phase transformation

2010

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Titanium dioxide, TiO 2 , is an important photocatalytic material that exists as two main polymorphs, anatase and rutile. The presence of either or both of these phases impacts on the photocatalytic performance of the material. The present work reviews the anatase to rutile phase transformation. The synthesis and properties of anatase and rutile are examined, followed by a discussion of the thermodynamics of the phase transformation and the factors affecting its observation. A comprehensive analysis of the reported effects of dopants on the anatase to rutile phase transformation and the mechanisms by which these effects are brought about is presented in this review, yielding a plot of the cationic radius versus the valence characterised by a distinct boundary between inhibitors and promoters of the phase transformation. Further, the likely effects of dopant elements, including those for which experimental data are unavailable, on the phase transformation are deduced and presented on the basis of this analysis.

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“…If the condition k,l& I holds, where k, is the Fermi wave vector and 1 the mean free path of electrons, the mechanism of electron conduction in the system can be described by the model of non-localized transport as pointed out by Mott and Allgaier [9]. The critical condition k,l x I corresponds to g x 0.3 applying the KuboGreenwood formula for the transport phenomenon.…”

Section: Discussionmentioning

confidence: 99%

Electronic properties of liquid SbSe and BiSe alloys

Satow

Uemura

Matsumoto

et al. 1987

Physica Status Solidi (b)

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The electrical conductivity (a), the magnetic susceptibility (x), and the thermoelectric power (8) of liquid Sb-Se and Bi-Se alloys are measured as function of composition in the temperature range from the melting point to about 1000 "C. On adding Se to Sb and Bi G indicates a rapid fall and x has a sharp maximum of diamagnetism at the stoichiometric composition of M,Se, in both the systems. A reversion of the sign of S is observed around the composition of Sb,Se, in liquid Sb-Se alloys, while S in liquid Bi-Se alloys remains negative over a wide composition range including Bi,Se,. The calculated value of g (the ratio of real and free electron density of states a t the Fermi level) using the observed values of a begins t o decrease in the vicinity of 50 atyo Se and drops sharply at the concentration of 60 atyo Se in both systems. Electronic properties obtained are discussed in the light of current transport theories employed in liquid semiconductors.

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Localized States in Disordered Lattices

Cited by 79 publications

References 34 publications

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Review of the anatase to rutile phase transformation

Electronic properties of liquid SbSe and BiSe alloys

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