Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD

Hidouri, Tarek; Saidi, F.; Maâref, H.; Rodriguez, Philippe; Auvray, Laurent

doi:10.1016/j.vacuum.2016.07.018

Cited by 19 publications

(11 citation statements)

References 18 publications

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“…In order to understand the anomalous temperature dependence of PL, the PL peak position has been investigated using the LSE model developed by Li et al [ 25 , 26 ]. Indeed, this quantitative model provides a satisfactory explanation for the anomalous spectral features of the localized-state luminescence previously observed in several III–V materials such as boron-based B(In)GaAs/GaAs [ 27 , 28 ] alloys and InGaAs/GaAs MQWs [ 29 , 30 ]. The model assumed that the localized state has a Gaussian-type energy distribution for density of states given by: …”

Section: Theoretical Approachmentioning

confidence: 53%

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

et al. 2017

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This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.

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Section: Theoretical Approachmentioning

confidence: 53%

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

et al. 2017

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“…To explain the abnormal behavior of these MSM structures, the carrier transfer mechanism in the localized states can be suggested. The theory of carrier localization is generally used to justify the high efficiency of III-N light-emitting diodes (LEDs) and some other related, despite the high density of defects [22][23][24][25] . This behavior of carriers in localized states has also been recognized in organic materials with a large number of defects 26 .…”

Section: Gan (15 μM)mentioning

confidence: 99%

“…This behavior of carriers in localized states has also been recognized in organic materials with a large number of defects 26 . The localized states are minimum energy levels induced by potential fluctuations due to cluster and/or interstitial atoms in III-V semiconductors and depends on the dopant type, dopant density, semiconductor thickness, material composition, and processing conditions of crystal growth 22 . In the III-V LEDs, carriers are generated by excitation power and stay at the minimum energy levels of localized states (within quantum wells), prevented from being traped by the defects.…”

Section: Gan (15 μM)mentioning

confidence: 99%

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Barghamadi

Alam

Ghafari

et al. 2021

Preprint

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The room temperature effect of a low dose rate (10-4 rad (Si)/s) 60 Co γ-irradiation on the structural propertiesand dark current of the GaN-based metal-semiconductor-metal (MSM) structure has been studied. In contrast to previous studies, a non-monotonous dependence of the dark current with the γ-irradiation dose is observed. The intensity and linewidth of the photoluminescence (PL) peaks correlate with the changes in electrical characteristics and eventually degrade after prolonged exposure to the γ-radiation. The abnormal behavior of the MSM structure and particularly its I-V and PL characteristics are explained by considering the carrier transfer mechanism in the localized states. These phenomena are associated with the decrease of shallow donors’ density in localized states and the activation of the non-radiative centers as radiation dose increases. These experimental results and the mechanism presented are essential for understanding the interaction of the γ-irradiation with n-GaN and for estimation of reliability of GaN-based (opto)electronics in harsh conditions of γ-radiation (space applications, liquidation of consequences of technogenic catastrophes, etc.).

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“…The tips in the bowtie structure then has a 5 nm gap with a radius of curvature (RoC) of <1 nm. When the WSe 2 ML is transferred to this extremely sharp structure, the locally induced strain forms a potential well, which can bound excitons tightly on the nanoscale [27,28,12]. To couple optical fields effectively to these X L and detect their PL responses, we use TEPL spectroscopy, as illustrated in Figure 1a [29].…”

Section: Triple-sharp-tips Geometry For Deterministic Localized Excit...mentioning

confidence: 99%

Radiative control of localized excitons at room temperature with an ultracompact tip-enhanced plasmonic nano-cavity

Lee¹,

Kim²,

Park³

et al. 2020

Preprint

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In atomically thin semiconductors, localized exciton (XL) coupled to light shows single quantum emitting behaviors through radiative relaxation processes providing a new class of optical sources for potential applications in quantum communication. In most studies, however, XL photoluminescence (PL) from crystal defects has mainly been observed in cryogenic conditions because of their subwavelength emission region and low quantum yield at room temperature. Furthermore, engineering the radiative relaxation properties, e.g., emission region, intensity, and energy, remained challenging. Here, we present a plasmonic antenna with a triple-sharp-tips geometry to induce and control the XL emission of a WSe2 monolayer (ML) at room temperature. By placing a ML crystal on the two sharp Au tips in a bowtie antenna fabricated through cascade domino lithography with a radius of curvature of <1 nm, we effectively induce tensile strain in the nanoscale region to create robust XL states. An Au tip with tip-enhanced photoluminescence (TEPL) spectroscopy is then added to the strained region to probe and control the XL emission [1]. With TEPL enhancement of XL as high as ∼10 6 in the triple-sharp-tips device, experimental results demonstrate the controllable XL emission in <30 nm area with a PL energy shift up to 40 meV, resolved by tip-enhanced PL and Raman imaging with <15 nm spatial resolution. Our approach provides a systematic way to control localized quantum light in 2D semiconductors offering new strategies for active quantum nanooptical devices.

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Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD

Cited by 19 publications

References 18 publications

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Radiative control of localized excitons at room temperature with an ultracompact tip-enhanced plasmonic nano-cavity

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