2018
DOI: 10.1021/acsanm.8b00123
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Localized-State-Dependent Electroluminescence from ZnO/ZnS Core–Shell Nanowires–GaN Heterojunction

Abstract: ZnO is a very important material for excitonic ultraviolet optoelectronic devices operating above room temperature due to its wide band gap and high exciton binding energy. In this paper, the influences of different degrees of the localized state on the photoluminescence and electroluminescence properties of the ZnO/ZnS core–shell nanowires–GaN heterojunction are systematically discussed. The physical model for radiative recombination of localized carriers was proposed to explain these phenomena. Our results i… Show more

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Cited by 13 publications
(3 citation statements)
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“…Among the semiconductor based photocatalyst, ZnO and TiO 2 are widely used due to their strong oxidation capacity, chemical stability, non-toxicity, low cost etc. ZnO (3.37 eV) is one of the best alternate semiconductor material for TiO 2 (3.2 eV) as it has similar band gap energy and high quantum efficiency [6][7][8][9][10][11][12][13][14][15][16][17][18] .…”
mentioning
confidence: 99%
“…Among the semiconductor based photocatalyst, ZnO and TiO 2 are widely used due to their strong oxidation capacity, chemical stability, non-toxicity, low cost etc. ZnO (3.37 eV) is one of the best alternate semiconductor material for TiO 2 (3.2 eV) as it has similar band gap energy and high quantum efficiency [6][7][8][9][10][11][12][13][14][15][16][17][18] .…”
mentioning
confidence: 99%
“…2b). 24,25 Besides, energy-dispersive spectroscopy (EDS) was performed for the characterization of the elemental composition within ZnOS-3. Element mapping confirms that O, S, and Zn elements are uniformly distributed on the nanoparticles (Fig.…”
Section: Synthesis and Characterization Of Znos-xmentioning
confidence: 99%
“…With the development and understanding of solid-state physics and using several luminescence techniques such as cathodoluminescence, polarized luminescence, thermoluminescence etc, various models [19,20] were developed to illustrate electronic transitions and the nature of defects responsible for the luminescence behavior in ZnS. There are several models in the literature like donor-acceptor pair emission [21], emission due to clouds of defects [22], excitonic emission [23], localized state emission [24], emission provided by isoelectronic traps [25] or band edge emission [26]. Also, the ZnS activated with Ag + ions is a leading scintillator material extensively in neutron, α particles and radon detection [27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%