Controlling the flow of charge neutral interlayer exciton
(IX)
quasiparticles can potentially lead to low loss excitonic circuits.
Here, we report unidirectional transport of IXs along nanoscale electrostatically
defined channels in an MoSe2–WSe2 heterostructure.
These results are enabled by a lithographically defined triangular
etch in a graphene gate to create a potential energy “slide”.
By performing spatially and temporally resolved photoluminescence
measurements, we measure smoothly varying IX energy along the structure
and high speed exciton flow with a drift velocity up to 2 × 106 cm/s, an order of magnitude larger than previous experiments.
Furthermore, exciton flow can be controlled by saturating exciton
population in the channel using a second laser pulse, demonstrating
an optically gated excitonic transistor. Our work paves the way toward
low loss excitonic circuits, the study of bosonic transport in one-dimensional
channels, and custom potential energy landscapes for excitons in van
der Waals heterostructures.