Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE

Selective Area Masked Growth (Nano to Micro)

“…SAG of various types of precursors has been studied by different groups [18,87,92,93,98,99,102,[104][105][106][107][108][109][110][111][112][113][114][115][116]. SAG of various types of precursors has been studied by different groups [18,87,92,93,98,99,102,[104][105][106][107][108][109][110][111][112][113][114][115][116].…”

“…Therefore, NW growth along the four equivalent <111> directions always occurs on a silicon (111) surface. It grows preferentially along the <111>A (outmost atomic layers contains group III atoms) direction or the <111>B (outmost atomic layers contains group V atoms) direction.…”

“…QD-based semiconductor lasers require a much lower current density to achieve population inversion and are much less sensitive to thermal effects. In 2004, Märtensson et al successfully demonstrated the heteroepitaxial growth of GaP on Si (111) and Si (001) substrates. Patterned QDs have been fabricated using SA-MOCVD [63,64].…”

(Ga,In)P nanowires grown without intentional catalyst

“…It is possible to see peaks at 395 and 360 cm À 1 , they are the longitudinal (LO) and transversal (TO) optical modes, respectively. Those peaks are shifted from the peaks of pure GaP indicating that In is present [23][24][25][26][27][28]. The In content in the nanowires is dependent on the pressure of the chamber.…”

Growth and characterization of sub-wavelength-sized GaInP ridge structures on GaAs substrates

“…To realize (Al y Ga 1 À y ) 0.51 In 0.49 P-based high-efficiency LEDs utilizing the evanescent wave coupling effect would require GaInP and AlGaInP ridge structures with sub-wavelength-sized ridge-top facets. There are several papers in the literature reporting the fabrication of narrow GaInP ridges, aimed at the formation of GaAs/GaInP quantum wires [3,4]. However, two important issues for LED applications have not yet been carefully addressed.…”