2023
DOI: 10.1039/d2nr07252a
|View full text |Cite
|
Sign up to set email alerts
|

Localised strain and doping of 2D materials

Abstract: There is a growing interest in 2D materials-based devices as the replacement for established materials, such as silicon and metal oxides in microelectronics and sensing, respectively. However, the atomically thin...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
0
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 10 publications
(2 citation statements)
references
References 138 publications
0
0
0
Order By: Relevance
“…3b exclusively for atomic layer investigation, carried out separately, exposing the derivative of exposed ions (i.e nitronium and ammonium). The mechanical strain and the electrical doping in MoS 2 can be related by a linear transformation of the peak shifts of E 1 2g and A 1g as described in our previous findings, 42,43 and the strain and doping axis can then be constructed by taking negligible doping and strain respectively (see ESI† S5 for details). The projection of the peak position deviations (from the doped-free and strain-free intersection point) to the strain and doping axis represents the localised strain and doping of MoS 2 , enabling the successful deconvolution of strain and doping in MoS 2 after the exposure of analytes.…”
Section: Resultsmentioning
confidence: 99%
“…3b exclusively for atomic layer investigation, carried out separately, exposing the derivative of exposed ions (i.e nitronium and ammonium). The mechanical strain and the electrical doping in MoS 2 can be related by a linear transformation of the peak shifts of E 1 2g and A 1g as described in our previous findings, 42,43 and the strain and doping axis can then be constructed by taking negligible doping and strain respectively (see ESI† S5 for details). The projection of the peak position deviations (from the doped-free and strain-free intersection point) to the strain and doping axis represents the localised strain and doping of MoS 2 , enabling the successful deconvolution of strain and doping in MoS 2 after the exposure of analytes.…”
Section: Resultsmentioning
confidence: 99%
“…Recently, two-dimensional (2D) materials attract researchers for their unique properties, 2D NMCs featured with their exceptionally large specific surface areas, massive exposed surface atoms, and extremely adjustable microstructure, offering abundant active sites and high atomic utilization [21,22], which is extremely beneficial for catalytic reaction. Meanwhile, some synergic strategies have been prescribed for improving the intrinsic activity of 2D NMCs, such as morphology engineering, defect engineering, strain engineering, surface engineering, doping engineering and alloying engineering (figure 1) [23][24][25]. Particularly, heteroatom doping strategy is proven an effective way to enhance the intrinsic activity of electrocatalysts by modulating their electronic structures, and thus has aroused extensive research interests.…”
Section: Introductionmentioning
confidence: 99%