Localised modifications of anatase TiO2 thin films by a Focused Ion Beam

Surpi, Alessandro; Göthelid, Emmanuelle; Kubart, Tomáš; Martin, David; Jensen, Jens

doi:10.1016/j.nimb.2010.05.074

Cited by 1 publication

(2 citation statements)

References 39 publications

(52 reference statements)

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“…In the current study, treatment 3 applied with 30 kV the same acceleration voltage as Surpi et al, [34] in combination with a stronger higher ion beam current of 30 nA. Therefore, for the Mg-PSZ and the Y-PSZ materials in our studies a similar effect was assumed for the integration of Ga þ ions into the zirconia surface.…”

Section: Phase Transformation Of Zromentioning

confidence: 75%

“…[1] Surpi et al investigated the chemical surface modification of polycrystalline TiO 2 (anatase) after an FIB treatment with Ga þ ions with an acceleration voltage of 30 kV and a beam current up to 30 pA using photoelectron spectroscopy. [34] This technique permits analysis of the binding energy of each component on the surface. The resulting data of Surpi et al indicated that the implanted Ga þ ions had an oxidation state of þ3 and that no metallic Ga was observed.…”

Section: Phase Transformation Of Zromentioning

confidence: 99%

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Focused Ion Beam Parameters for the Preparation of Oxidic Ceramic Materials

et al. 2020

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The focused ion beam (FIB) technology is a useful tool for structuring and preparing material surfaces on a micrometer and nanometer scale. [1,2] The technology is based on the principle that ions are extracted from an ion source (e.g., a liquid metal ion source, most commonly Ga þ , or gas field ion sources, such as He þ ) by an electric field. [1] Then, they are accelerated toward the substrate surface and focused to form an ion beam by applied electric and magnetic fields. For Ga þ sources, typical acceleration voltages are 5-50 keV and a beam focus <10 nm can be realized. The ion current is usually in the range of tenths of picoamperes to several nanoamperes. [2,3] When the focused ion beam meets the surface of the target material, various interactions between the incident ion beam and target surface occur. [1] First, the incident ions of the beam enter the sample. Due to interactions with the target atoms (nuclei and electrons), the ions are deflected. Second, collisions with target atoms are likely to take place. This may cause a removal of a target atom from its lattice position. Then, the removed target atom can collide with further target atoms, creating collision cascades. Numerous cascades will reach the sample surface, and if provided sufficient energy, will remove atoms from the sample surface. This effect is called sputtering. These processes of ions penetrating and leaving the sample surface are accompanied by the ejection of secondary electrons from the sample surface. Numerous ions that penetrate the surface remain as implanted ions in the target material.These interactions between the FIB and the material surfaces can be brought to several uses for the industrial operator or scientists. 1) Imaging: The ejected secondary electrons and ions from the surface can be used for imaging purposes. [1] 2) Sputtering: This removal of material from the target surface, also called milling, can be used to produce defined samples for further analytical applications (e.g., production of lamellar samples for transmission electron microscopy (TEM) [4,5] ), to structure material surfaces down to the nanometer scale (e.g., structuring of semiconductors [3,6] or samples for mechanical testing on a micrometer scale [7,8] ), and to create serial sections by repeated milling steps for 3D analyses of bulk material. [9] Furthermore, the removed material can be used for elemental analysis of the material surface with the help of secondary ion mass spectrometry (SIMS). [2] 3) Creation of structures: The energy provided by the incident ions can be used to deposit other elements that are provided by precursor molecules. They are introduced via a gas injection system (GIS) on the substrate surface. Due to the energetic input of the ion beam, cracking reactions take place in the precursors and the intended component of the precursor molecules is deposited on the material (e.g., deposition of electrically conductive metallic

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Section: Phase Transformation Of Zromentioning

confidence: 75%

Section: Phase Transformation Of Zromentioning

confidence: 99%