Local voltage contrast changes in MOSFET using scanning electron microscopy with photoelectron beam technology
Daiki Sato,
Yuta Arakawa,
Kotaro Niimi
et al.
Abstract:Scanning electron microscopy (SEM) is used for metrology and inspection in semiconductor manufacturing. In addition, electrical defects such as short circuits and unintentional insulation appear as contrast differences called voltage contrast (VC) in SEM under low acceleration voltage conditions. Moreover, by using pulsed electron beams from a photocathode, the probe current can be arbitrarily changed by pixel in the SEM image. Using this technology, we succeeded in observing the change in the VC of the drain … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.