Local unequilibrium states in Pb1−xSnxTe(In) (x=0.25)

Akimov, B.A.; Brandt, N. B.; Chesnokov, S. S.; Egorov, K.N.; Khokhlov, D. R.

doi:10.1016/0038-1098(88)90391-2

Cited by 15 publications

(4 citation statements)

References 3 publications

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“…Local infrared illumination leads to local generation of nonequilibrium free electrons, i.e. the persistent photoconductivity effect is observed only in the illuminated part of the sample, and the photoexcitation does not propagate into the darkened regions [10]. The characteristic time of the excitation propagation is at least more than 104 s at T = 4.2 K. The spatial characteristic scale is -10 gm.…”

Section: Radiometric Parametersmentioning

confidence: 98%

Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

2001

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Doping of the lead telluride and related alloys with the group III impurities results in appearance of unique physical features of the material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including possibilities of fast quenching of the persistent photoresponse, construction of a focal-plane array, new readout technique, and others. Comparison of performance of the state of the art Ge(Ga) and Si(Sb) photodetectors with their lead telluride-based analogs shows that the responsivity of PbSnTe(In) photodetectors is by several orders of magnitude higher. High photoresponse is detected at the wavelength 116 micrometers in PbSnTe(In), and it is possible that the photoconductivity spectrum covers all the submillimeter wavelength range.

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Section: Radiometric Parametersmentioning

confidence: 98%

Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

2001

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“…the persistent photoconductivity effect is observed only in the illuminated part of the sample, and the photoexcitation does not propagate into the darkened regions. 11 The characteristic time of the excitation propagation is at least more than 10 4 s at T = 4.2 K. The spatial characteristic scale is ∼ 10 μm. The physical picture of the processes involved is the following.…”

Section: "Continuous" Focal-plane Arraymentioning

confidence: 99%

Detectors of terahertz radiation based on Pb 1-x Sn x Te(In)

Хохлов

2010

Terahertz Emitters, Receivers, and Applications

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Doping of the lead telluride and related alloys with the group III impurities results in appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We present the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group III-doped IV-VI in comparison with the modern photodetectors are summarized. The spectra of the persistent photoresponse have not been measured so far because of the difficulties with screening the background radiation. We report on the observation of strong persistent photoconductivity in Pb 0.75 Sn 0.25 Te(In) under the action of monochromatic submillimeter radiation at wavelengths of 176 and 241 microns. The sample temperature was 4.2 K, the background radiation was completely screened out. The sample was initially in the semiinsulating state providing dark resistance of more than 100 GOhm. The responsivity of the photodetector is by several orders of magnitude higher than in the state of the art Ge(Ga). The red cut-off wavelength exceeds the upper limit of 220 microns observed so far for the quantum photodetectors in the uniaxially stressed Ge(Ga). It is possible that the photoconductivity spectrum of Pb 1-x Sn x Te(In)covers all the submillimeter wavelength range.

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“…The local infrared illumination leads to the local generation of the nonequilibrium free electrons, i.e. the persistent photoconductivity effect is observed only in the illuminated part of the sample, and the photoexcitation does not propagate into the darkened regions [ 14]. The characteristic time of the excitation propagation is at least more than 104 s at T = 4.2 K. The spatial characteristic scale is -10 Vtm.…”

Section: Photoconductivitv Spectral Characteristicsmentioning

confidence: 99%

New Type of ir Photodectors Based on Lead Telluride and Related Alloys

Хохлов

1997

MRS Proc.

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Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.

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Local unequilibrium states in Pb1−xSnxTe(In) (x=0.25)

Cited by 15 publications

References 3 publications

Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

Detectors of terahertz radiation based on Pb 1-x Sn x Te(In)

New Type of ir Photodectors Based on Lead Telluride and Related Alloys

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