Local structure around Mn atoms in Si crystals implanted with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi mathvariant="normal">Mn</mml:mi><mml:mo>+</mml:mo></mml:msup></mml:math>studied using x-ray absorption spectroscopy techniques

Wolska, A.; Ławniczak-Jabłońska, K.; Klepka, Marcin T.; Walczak, Mateusz; Misiuk, A.

doi:10.1103/physrevb.75.113201

Cited by 56 publications

(33 citation statements)

References 15 publications

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“…2,3, 12,13,16 In that respect, a detailed study of the lattice sites occupied by implanted Mn in the phase-pure regime (dilute, randomly distributed Mn) should clarify whether this is indeed the case. We have addressed these questions by applying the electron emission channeling technique (EC) from implanted radioactive 56 Mn probes to different doping types of Si single crystals.…”

Section: Introductionmentioning

confidence: 99%

Direct observation of the lattice sites of implanted manganese in silicon

et al. 2016

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Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n + and p + ) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered towards substitutional sites and sites displaced from anti-bonding towards tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below ∼ 30%. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.

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Section: Introductionmentioning

confidence: 99%

Direct observation of the lattice sites of implanted manganese in silicon

et al. 2016

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“…Furthermore, the results obtained for samples prepared by similar techniques can contradict each other. [10][11][12][13] Until now, the mechanism of FM ordering in Si:Mn dilute alloys is far from being understood (see detailed discussion in Ref. 14).…”

Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

et al. 2011

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We present a first-principles study of the electronic structure and exchange interactions in Si/Mn digital magnetic alloy (DMA) consisting of Mn monolayers embedded in a Si matrix stacking along [001] direction. The main focus of our study is on the dependence of magnetic properties on the morphology of the Mn monolayer. Three different structural models for the Mn monolayer are considered: manganese in substitutional (i), interstitial (ii), and both interstitial and substitutional (iii) positions. The atomic positions in Si/Mn DMA are determined by means of the VASP code and then serve as input for multiple-scattering calculations of the electronic and magnetic structure. The magnetic force theorem is used to evaluate the exchange coupling parameters. A Heisenberg model based on those parameters is used to estimate magnon frequencies and magnetic phase-transition temperatures for different anisotropies. The magnetic properties of Si/Mn DMA are found to be strongly dependent on the underlying crystalline structure.

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“…[7], where MnSi precipitates with a disordered B20 coordination were achieved after annealing at 337 °C.…”

Section: Xafs Experiments and Analysismentioning

confidence: 99%

“…Structural analysis of dilute Mn x Si 1-x attributed the high T C to the co-existence of small Mn clusters and a nanocrystalline MnSi 1.7 phase. 3 A more detailed study later found that MnSi 1.7 likely had an ordering temperature closer to a bulk T C = 47 K and other nanocrystalline phases were responsible for the high T C. 4 Depending on Mn concentration and thermal manipulation during sample growth, precipitates with various Si:Mn phases 5,6 or nanocrystallites with defect MnSi structures 7 are produced. In addition, the size and shape of the ensuing precipitates are also influenced by the growth conditions and structures such as MnSi 1.7 nanospheres 8 and Mn x Si 1-x nanopipes 9 have been reported.…”

Section: Introductionmentioning

confidence: 99%

Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001)

et al. 2012

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The structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy (MBE) at low temperature are reported. X-ray absorption fine structure (XAFS) studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A capping layer grown at 200 ºC on 0.35 monolayer (ML) Mn results in a metastable MnSi phase with a B2-like (CsCl) structure, whereas a cap grown at room temperature on 0.5 ML followed by annealing at 200 °C produces a lower coordinated MnSi phase with a B20-like structure. Increasing the Mn thickness from 0.5 to 4 monolayers does not trigger a structural transformation but drives the structure closer to MnSi-B20. The sample with B2-like structure has the largest Mn magnetic moment of 0.33μ B /Mn at T=2 K, and a Curie temperature T C above 250 K.MnSi-B20 layers showed lower moments and much lower T C 's, in-line with those reported for MnSi-B20 thin films.2

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Local structure around Mn atoms in Si crystals implanted withMn+studied using x-ray absorption spectroscopy techniques

Cited by 56 publications

References 15 publications

Direct observation of the lattice sites of implanted manganese in silicon

Direct observation of the lattice sites of implanted manganese in silicon

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001)

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