In this paper we review results of studies of two types of spatially graded quantum well structures containing various layers of diłuted magnetic semiconductors Cd1-x xMn xTe or Cd1-x-yMnxΜgyΤe. The design of the structures has been recently proposed by us and suitable samples have been grown by a modified molecular beam epitaxy method. In the structures of the first type a digital profiling of the composition of the constituent material in the growth direction aIlowed to produce quantum wells with a specifically required shape of the confining potential (including parabolic, half-parabolic, triangular, and trapezoidal). Such samples were used for (i) determination of the conduction and vałence band offsets in MnTe/CdTe and MgTe/CdTe systems, (ii) for the demonstration of an enhanced exciton binding in a parabolic confining potential as well as for (iii) demonstration of the possibility of "spin-splitting engineering" in diluted magnetic semiconductors quantum structures. In the second type of the structures, a precise in-plane profiling of either quantum well width or the barrier width or n-type doping intensity was realized. These structures were subsequently used for studies of the evolution of optical spectra with an increase in the concentration of confined two-dimensional gas of conduction electrons.