Ga8.45Sr2.85, orthorhombic, Immm (no. 71), a = 4.3958(9) A, b = 4.5298(6)A, c = 26.002(4)Ä, V= 517.8 Ä 3 ,Ζ = 2, Rgt(F) = 0.038, wR^F 2 ) = 0.091, 7" =293 Κ.
Source of materialThree samples of Sr3_,Ga8+3 X with χ = 0.07,0.15 and 0.20 labeled as I, II and III, respectively, were prepared by melting of appropriate mixtures of the elements in welded Ta container in a high frequency furnace. After one week of thermal annealing at 800 °C they were quenched in ice water. According to the results of X-ray powder diffraction (Huber Guinier G670, CuKai radiation, λ = 1.540598 Λ) and metallographic investigations sample II was single phase containing the title compound while samples I and III included admixtures of Sri_xGa2+3x and SrGa4, respectively. Single crystals for X-ray diffraction were isolated from sample II. The material is gray with metallic luster. Due to the sensitivity regarding oxidation the samples were handled under inert conditions.
Experimental detailsAs starting values for structure refinement we used the atomic positions observed in EuaGae [1,2] which realizes a binary variant of the LbNUSLt type [3]. In the advanced steps of the refinement some additional peaks in hexagon-like arrangement were observed on the difference Fourier maps in the vicinity of Sri atoms (figure, top left). These correspond to two crystallographically independent Ga positions with partial occupation. This structural feature is accompanied by a reduced occupation of the Sri site. The lattice parameter of the compounds were determined with LaBe as internal standard (a = 4.15692 Ä). They agree well for the different samples indicating the absence of a significant homogeneity range (sample I: a = 4.3983 (7)
DiscussionThe main motif of Sr3-*Ga8+3* reproduces those of the l^NUSu structure type [3]. It can be described as an intergrowth of AIB2[4] and BaAL» [5] type fragments being realized by the so far known neighboring phases SrGa2 and SrGa4 [6]. The Ga atoms form a regular 3D framework by four-and six-membered rings based on three-(Gal and Ga2) four-(Ga2) and five-fold (Ga4) coordinated Ga atoms. The Ga-Ga contacts within the framework are in the range of 2.5162(8) A -2.6902(8) A being smaller than the average distances (Ga-Ga) = 2.703 A in a-Ga [7]. The Sri atoms in the AIB2 like part of the crystal structure (figure, top right) are partially substituted by Ga atoms located at the Ga5 and Ga6 sites forming almost regular hexagons (figure, middle and bottom right). However, the distances of next neighboring positions of (Ga5-Ga5) = 1.54(2) A and (Ga5-Ga6) = 1.46(1) A are too short to be simultaneously occupied. A reasonable model can be obtained by occupation of every second position within the hexagons forming isosceles triangular Ga3 groups with distances of (Ga5-Ga5) = 2.54(2) Ä and d(Ga5-Ga6) = 2.59(2) Ä. Two orientations of the triangular Ga3 units with respect to the unit cell are possible (figure, middle and bottom right). The distances (Gal-Ga5) = 2.498(5) A and (Ga3-Ga6) = 2.480(6) A between the Gal ...