Local melting of Au/Ni thin films irradiated by femtosecond laser through GaN

Okada, Tatsuya; Tomita, Takuro; Katayama, Hiroyuki; Fuchikami, Yuki; Ueki, Tomoyuki; Hisazawa, Hiromu; Tanaka, Yasuhiro

doi:10.1007/s00339-019-2982-1

Cited by 3 publications

(3 citation statements)

References 24 publications

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“…A summary of the Raman analysis results and regions labeled based on the regression analysis are reported in Table 1. In the periphery region (1), which is the farthest region from the laser-focused crater, the structure and thickness of the DLC film were similar to those of the as-received film. In this region, there was no change due to the laser irradia- Fig.…”

Section: Resultsmentioning

confidence: 77%

“…In femtosecond-laser processing, the non-thermal process becomes dominant because the laser pulse duration is comparable to the electron-lattice interaction time. Because a significant energy is injected in a very short time, unique phenomena such as structural change [1], high-precision processing, and laser-induced periodic structures [2][3][4][5], can be observed. However, it is challenging to distinguish between thermal and non-thermal processes, and the cumulative interaction of these two effects results in various phenomena.…”

Section: Introductionmentioning

confidence: 99%

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Raman Studies of Structural Changes in Diamond-like Carbon Films on Si Induced by Ultrafast Laser Ablation

2022

JLMN

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In this study, the diamond-like carbon (DLC), a tetrahedral amorphous carbon sample deposited on Si, was irradiated using a picosecond laser. We evaluated the picosecond-laser-induced structural and morphological changes in DLC using micro-Raman spectroscopy via line measurements. We obtained the spatial distribution of the structure and morphology of DLC on Si by regression analysis of the Raman spectra. The photo-induced crater could be categorized into four regions: peripheral, morphological-change, structural-changes, and ablated regions. The structure and morphology of the peripheral region were similar to those of the as-received DLC. In the morphological-change region, which is inside the periphery region, the thickness of the DLC decreased without any structural changes. At the center of the crater, which is shown in black in the optical image, two regions were identified by Raman spectroscopy. On the outer side, there is a structural-change region where the graphitization of DLC materialized with a reduction in the film thickness. Inside the structural-change region, there is an ablated region where the DLC was degraded by laser ablation.

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Section: Resultsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Raman Studies of Structural Changes in Diamond-like Carbon Films on Si Induced by Ultrafast Laser Ablation

2022

JLMN

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“…However, stealth dicing is typically combined with a mechanical breaking process. When it comes to hard-brittle material such as SiC [20], this mechanical breaking process can cause serious edge breakage and even cause wrong crack propagation and, finally, reduce the dicing yield.…”

Section: Introductionmentioning

confidence: 99%

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

et al. 2021

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SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.

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Two-temperature model for ultrafast melting of Au-based bimetallic films interacting with single-pulse femtosecond laser: Theoretical study of damage threshold

Aeaby

Ray

2023

Phys. Rev. B

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Local melting of Au/Ni thin films irradiated by femtosecond laser through GaN

Cited by 3 publications

References 24 publications

Raman Studies of Structural Changes in Diamond-like Carbon Films on Si Induced by Ultrafast Laser Ablation

Raman Studies of Structural Changes in Diamond-like Carbon Films on Si Induced by Ultrafast Laser Ablation

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Two-temperature model for ultrafast melting of Au-based bimetallic films interacting with single-pulse femtosecond laser: Theoretical study of damage threshold

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