Local magnetization rotation in NiFe wire monitored by multiple transverse probes

Sato, Hideyuki; Hanada, R.; Sugawara, Hitoshi; Aoki, Yuji; Ono, Teruo; Miyajima, H.; Shinjo, Teruya

doi:10.1103/physrevb.61.3227

Cited by 26 publications

(13 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 are very similar to those reported by other workers in permalloy and Co wires [5,8,9,14,16,17]. It seems clear that the dips are associated with the magnetization reversal process.…”

Section: Resultssupporting

confidence: 89%

“…Previous studies of permalloy wires have shown that coherent rotational of M can mimic the effects of a negative wall resistance [14]. We show that careful measurements of the resistance with a combination of parallel and perpendicular magnetic fields can be used to extract the wall resistance.…”

Section: Introductionmentioning

confidence: 73%

“…1(a), then the dips would be evidence for a negative wall resistance. However, it has been pointed out by a number of authors (e.g., [4,5,8,14]) that one should expect to find a rotation of M just prior or during reversal, as sketched in Fig. 1(b).…”

Section: Resultsmentioning

confidence: 96%

See 2 more Smart Citations

Electron transport and magnetoresistance in ferromagnetic nanostructures

Giordano

Çetin

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

Recent studies of very narrow Ni wires have shown that the resistance of a wire containing domain walls can be smaller than for a sample without walls; i.e., the domain wall resistance is effectively negative. In this paper we investigate the corresponding behavior of permalloy wires. For these wires the resistance decreases markedly during magnetization reversal. We show that this decrease is due to a combination of coherent rotation and a negative domain wall resistance. We are able to separate these two effects, and extract an estimate for the resistance of an individual domain wall.

show abstract

“…2 are very similar to those reported by other workers in permalloy and Co wires [5,8,9,14,16,17]. It seems clear that the dips are associated with the magnetization reversal process.…”

Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 73%

See 1 more Smart Citation

Electron transport and magnetoresistance in ferromagnetic nanostructures

Giordano

Çetin

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Although the effect is quite small in metallic samples (Berger, 1991a;Sato et al, 2000;Gopalaswamy and Berger, 1991), a giant planar Hall effect has been reported in GaMnAs films magnetized in plane (Tang, Kawakami, Awschalom and Roukes, 2003) and this effect has been used to detect a single DW (Honolka et al, 2005;Tang, Masmanidis and Kawakami, 2004). Hall-effect-based measurements require the device to be patterned in a Hallcross geometry, thus limiting the flexibility of the device structure.…”

Section: Hall Effectmentioning

confidence: 99%

Current Induced Domain‐wall Motion in Magnetic Nanowires

Thomas¹,

Parkin²

2007

Handbook of Magnetism and Advanced Magnetic Materials

View full text Add to dashboard Cite

Recent research on current‐induced domain‐wall motion in magnetic nanowires is reviewed. The first part of the article is devoted to theoretical models and micromagnetic simulations. We first describe the magnetic structure of head‐to‐head domain walls, and then discuss theories of their interaction with spin‐polarized current. The role of both adiabatic and nonadiabatic spin‐transfer torques is discussed in the framework of an analytical one‐dimensional model and micromagnetic simulations. The second part of the article reviews recent experimental studies. Both field‐driven and current‐driven excitation and manipulation of domain walls is discussed.

show abstract

“…It is well known that domain walls contribute an additional magnetoresistance, called domain wall scattering, in ferromagnetic materials. This subject is still an open area of research with both positive contributions of domain walls to resistance [8] and negative contributions [9] reported. García et al [10] have also shown that both negative and positive magnetoresistance may be obtained in an electrodeposited Ni nanocontact, dependent on the combination of applied current and magnetic fields, which was discussed in terms of movement of domain walls in the contact region.…”

Section: Sample Fabrication and Measurementsmentioning

confidence: 99%

Discontinuous Resistance Change and Domain Wall Scattering in Patterned NiFe Wires With a Nanoconstriction

Lepadatu

2004

IEEE Trans. Magn.

View full text Add to dashboard Cite

Abstract-A nonlinear current-voltage ( -) characteristic was observed in patterned NiFe wires with a central "bow-tie" point contact constriction. By passing a dc current through the wire, a sharp resistance drop was obtained for current densities in the range of 1.1-1.4 10 7 A/cm 2 . This is attributed to current-induced domain wall drag, resulting in displacement of a domain wall away from the constriction. A maximum current-induced resistance change of 0.079% was obtained for a 100-nm constriction, which is comparable with the magnetoresistance due to domain wall scattering in NiFe.

show abstract

Local magnetization rotation in NiFe wire monitored by multiple transverse probes

Cited by 26 publications

References 8 publications

Electron transport and magnetoresistance in ferromagnetic nanostructures

Electron transport and magnetoresistance in ferromagnetic nanostructures

Current Induced Domain‐wall Motion in Magnetic Nanowires

Discontinuous Resistance Change and Domain Wall Scattering in Patterned NiFe Wires With a Nanoconstriction

Contact Info

Product

Resources

About