Local lattice distortion of Ge-dilute Ge-Si alloy: Multiple-scattering EXAFS study

Sun, Zheng; Yan, Wensheng; Ōyanagi, H.; Pan, Zhiyu; Wei, Shiqiang

doi:10.1103/physrevb.74.092101

Cited by 6 publications

(1 citation statement)

References 26 publications

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“…Up to now, cases have been presented where the magnetic impurity is located in a well-defined environment (a substitutional site, an interstitial or a segregated phase), and for which XAS has provided a precise determination of the local environment. It has been possible to describe the site up to several coordination shells in the case of Fe [66] and Mn [80] in GaN, Mn in GaAs [73], As [43] and Ge [82] in Si just to cite a few cases. There exist, however, cases where this situation is more complex and no precise conclusions can be drawn from the analysis of XAS data, in particular due to the fact that the dopant sits in a variety of sites.…”

Section: Problematic Casesmentioning

confidence: 99%

Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors

d’Acapito¹

2011

Semicond. Sci. Technol.

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X-ray absorption spectroscopy (XAS) is an ideal technique for the investigation of the local structure in materials and in particular around dopant species in semiconducting crystals. This experimental technique permits the quantitative determination of structural parameters such as the bond distances and number of neighbors that are fundamental for understanding the incorporation site of the dopant in the matrix. The use of ab initio advanced methods for the simulation of atomic structures or XAS spectra has recently permitted a more complete interpretation of experimental data. Examples on the use of joint theoretical/experimental methods are given here as well as some perspectives for the future development of XAS data analysis.

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