Local field effects for spherical quantum dot emitters in the proximity of a planar dielectric interface

Gordon, Jeffrey N.; Gartstein, Yuri N.

doi:10.1364/josab.31.002029

Cited by 9 publications

(9 citation statements)

References 45 publications

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“…The efficiency of ET is defined here as the fraction Γ ET /Γ of the ET rate Γ ET = Γ − Γ rad in the total electrodynamic decay rate Γ of the emitter, when the purely radiative decay rate Γ rad is subtracted. Figure 3(b) presents results derived for the interfaces between sapphire substrate and vacuum as well as between sapphire and the medium with refraction index 1.6 as representative 20 of the dense NQD films, comparing which illustrates the extra screening effect on NRET that the film’s own polarizability could have (no account of relatively small local field effects 13 47 was made here). As per Fig.…”

Section: Discussionmentioning

confidence: 99%

Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

Guo

Sampat

Zhang

et al. 2017

Sci Rep

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Two-dimensional transition metal dichalcogenides (TMDCs) like MoS2 are promising candidates for various optoelectronic applications. The typical photoluminescence (PL) of monolayer MoS2 is however known to suffer very low quantum yields. We demonstrate a 10-fold increase of MoS2 excitonic PL enabled by nonradiative energy transfer (NRET) from adjacent nanocrystal quantum dot (NQD) films. The understanding of this effect is facilitated by our application of transient absorption (TA) spectroscopy to monitor the energy influx into the monolayer MoS2 in the process of ET from photoexcited CdSe/ZnS nanocrystals. In contrast to PL spectroscopy, TA can detect even non-emissive excitons, and we register an order of magnitude enhancement of the MoS2 excitonic TA signatures in hybrids with NQDs. The appearance of ET-induced nanosecond-scale kinetics in TA features is consistent with PL dynamics of energy-accepting MoS2 and PL quenching data of the energy-donating NQDs. The observed enhancement is attributed to the reduction of recombination losses for excitons gradually transferred into MoS2 under quasi-resonant conditions as compared with their direct photoproduction. The TA and PL data clearly illustrate the efficacy of MoS2 and likely other TMDC materials as energy acceptors and the possibility of their practical utilization in NRET-coupled hybrid nanostructures.

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Section: Discussionmentioning

confidence: 99%

Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

Guo

Sampat

Zhang

et al. 2017

Sci Rep

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“…On the other hand, materials such as MoS 2 , WS 2 , and InAs will show FRET that becomes weaker as the layer thickness is increased . Furthermore, Gartstein et al theoretically investigated and compared both macroscopic analyses by considering an acceptor slab having a complex dielectric function (i.e., CPS theory) and direct modeling, which considered discrete acceptor layers as polarizable point dipoles . In both models, non‐additivity (non‐monotonic behavior) in FRET efficiencies is observed as a function of the acceptor layer thickness, especially when the polarizability of the acceptor layer is relatively high (e.g., ε ′ > 7 and ε ″ = 0.2).…”

Section: Two‐dimensional Materials As Efficient Exciton Sinksmentioning

confidence: 99%

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Güzeltürk

Demir

2016

Adv Funct Materials

103

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wileyonlinelibrary.comtelecommunications. Conventional optoelectronics relies on high-temperature, gas-phase, epitaxy-grown semiconductors such as III-V compounds, [1,2] which make a mature materials technology. However, high-thermal budget, high-cost, and a limited set of substrates, which are CMOS-incompatible, hamper their use in versatile platforms, including flexible surfaces and large-area applications. Besides, the last decade has witnessed the rise of alternative low-dimensional semiconductor materials such as colloidal semiconductor nanocrystals, [3] organic semiconductors [4,5] and more recently, two-dimensional (2D) semiconductors. [6] These materials offer advantages over conventional semiconductors thanks to their low cost and low thermal budget growth, solution processability, and roll-to-roll fabrication on arbitrary substrates on a large scale. These materials are expected to impact a broad range of applications in optoelectronics and electronics.In bulk and weakly confined semiconductors, the excited electronic state is typically in the form of free electron-hole pairs due to weak Coulomb interaction energy (∼10 meV). [7] On the other hand, in low-dimensional nanoemitters, the excited state is essentially in the form of strongly bound electron-hole pairs (i.e., excitons) with large Coulomb interaction energy (10 meV) thanks to strong quantum confinement [8] and large dielectric screening, [9,10] allowing for strong light-matter interactions. Thus, in these nanoemitters, it becomes central to control excitonic interactions including exciton transfer, diffusion, trapping, dissociation, annihilation, and radiative recombination to accomplish the desired photonic properties and maximize optoelectronic performance.As it naturally happens in photosynthetic light-harvesting complexes, efficient and directed exciton flow is highly desired in semiconductor nanostructures. To this end, mastering exciton flow at the nanoscale through near-field nonradiative energy transfer has proven vital to accomplish efficient light generation and light utilization using nanoemitters and their hybrid nanostructures. [7,[11][12][13][14][15] In this feature article, we highlight recent developments in the field of energy transfer materials for optoelectronics. We review new insights on the near-field nonradiative transfer in excitonic nanoemitter systems. Our main focus is on hybrid systems comprising colloidal nanocrystals, and 2D and organic semiconductors. Also, Effective utilization of excitation energy in nanoemitters requires control of exciton flow at the nanoscale. This can be readily achieved by exploiting nearfield nonradiative energy transfer mechanisms such as dipole-dipole coupling (i.e., Förster resonance energy transfer) and simultaneous two-way electron transfer via exchange interaction (i.e., Dexter energy transfer). In this feature article, we review nonradiative energy transfer processes between emerging nanoemitters and exciton scavengers. To this end, we highlight the potential of colloidal semiconduct...

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“…We shall consider the QD emitter as a point dipole. (See [201] for discussion of possible effects beyond this approximation.) The radiative decay rate in the presence of other bodies is determined by the total field that acts on the emitter (created by itself and scattered by the bodies) and given by [78]…”

Section: Radiative Lifetime Near Interfacementioning

confidence: 99%

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

Бурдов

Vasilevskiy

2021

Applied Sciences

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In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

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Local field effects for spherical quantum dot emitters in the proximity of a planar dielectric interface

Cited by 9 publications

References 45 publications

Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

Near‐Field Energy Transfer Using Nanoemitters For Optoelectronics

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

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