Local electronic structure of the tellurium atoms in As2Te3–GeTe compounds

Lippens, P.E.; Brousse, E.; Jumas, Jean‐Claude

doi:10.1016/s0022-3697(99)00137-7

Cited by 14 publications

(2 citation statements)

References 17 publications

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“…The Ge 3d and Te 3d 5/2 and Te 3d 3/2 peaks shown in Figs. S9 and S10 have a binding energy of 33.14 and 34.16, 572.46 and 547.09, and 583.08 and 584.72 eV, respectively, which are in agreement with GeTe bulk materials [24,25]. No peaks of other elements are observed in our sample, suggesting the samples are pure GeTe only.…”

Section: Resultssupporting

confidence: 83%

Syntheses of pure GeTe crystals from single source precursors (R2GeTe)3 (R=Et, Bu)

et al. 2015

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Section: Resultssupporting

confidence: 83%

Syntheses of pure GeTe crystals from single source precursors (R2GeTe)3 (R=Et, Bu)

et al. 2015

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“…The binding energies at 30.0 eV in Figure 4a and 572.4 eV in Figure 4(b) are attributed to Ge 3d and Te 3d 5/2 in GeTe, respectively, which is in agreement with values reported in the literature. 20,[22][23][24] The XPS analysis indicates that the nanowires are GeTe compound. The peaks at 32.8 eV in Figure 4a and 576.2 eV in Figure 4b are due to GeO 2 and TeO 2 , respectively, from the thin oxide outer layer.…”

Section: Methodsmentioning

confidence: 99%

One-Dimensional Phase-Change Nanostructure: Germanium Telluride Nanowire

Sun

et al. 2007

J. Phys. Chem. C

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High-quality nanowires of germanium telluride (GeTe), a one-dimensional chalcogenide phase-change nanostructure, were synthesized via thermal evaporation method under vapor−liquid−solid mechanism. The physical morphology, chemical composition, and crystal structure of the as-synthesized GeTe nanowires were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy (HR-TEM), and X-ray photoemission spectroscopy. Through real-time TEM imaging of nanowire sample heated in an incrementally controllable heating system, the melting point of a single crystalline GeTe nanowire (∼40−80 nm diameter) is found to be significantly lower than that of its bulk counterpart (46% reduction, from 725 to 390 °C). The significant reduction in melting point makes one-dimensional phase-change chalcogenide nanowire a potential material for application in low-power high-density resistive switching nonvolatile data storage in which the thermal energy for material phase transition would be significantly reduced.

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One-Dimensional Phase-Change Nanomaterials for Information Storage Applications

Sun

et al. 2008

One-Dimensional Nanostructures

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Local electronic structure of the tellurium atoms in As2Te3–GeTe compounds

Cited by 14 publications

References 17 publications

Syntheses of pure GeTe crystals from single source precursors (R2GeTe)3 (R=Et, Bu)

Syntheses of pure GeTe crystals from single source precursors (R2GeTe)3 (R=Et, Bu)

One-Dimensional Phase-Change Nanostructure: Germanium Telluride Nanowire

One-Dimensional Phase-Change Nanomaterials for Information Storage Applications

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