Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces

Brillson, L. J.; Bradley, S. T.; Tumakha, S.; Goss, S. H.; Sun, Xiaoling; Okojie, Robert S.; Hwang, Jenn-Shyong; Schaff, William J.

doi:10.1016/j.apsusc.2004.09.172

Search citation statements

Order By: Relevance

Paper Sections

Select...

Application To Transistors1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2012

2014

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lateral DRCLS obtained from specific depths provides information on composition and defects to account for the variations in HEMT properties. Figures 18(a) and (b) depict the lateral and cross-sections geometries of this application, respectively [101][102][103][104][105][106]. Figure 18(a) shows how DRCL spectra are acquired at increasing radial distances of the wafer.…”

Section: Application To Transistorsmentioning

confidence: 99%

Applications of depth-resolved cathodoluminescence spectroscopy

Brillson¹

2012

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Depth-resolved cathodoluminescence spectroscopy (DRCLS) has developed over the past few decades into a powerful technique for characterizing electronic properties of advanced materials structures and devices on a nanoscale. The lateral and depth-resolved capabilities of DRCLS enable researchers to probe native defects, impurities, chemical changes and local band structure inside state-of-the-art device structures on an unprecedented scale. A key strength of DRCLS is its ability to distinguish electronic features at buried interfaces within multilayer device structures, interfaces whose microscopic physical features can determine macroscopic electronic properties. This review provides a general overview of DRCLS and illustrates the wide array of applications now available using this technique.

show abstract