Abstract:Miniaturizing a tunneling anisotropic magneto resistance contact allows local sensing of the density of states of (Ga,Mn)As. This offers the possibility to locally read-out magnetization states in nanoscale devices without the need to add disruptive metal contacts. Using this technique, we show that the behavior of (Ga,Mn)As at a sub micron scale is closer to that of an ideal macrospin than is the case for macroscopic (Ga,Mn)As layers.
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