Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts

Liu, Baodan; Yang, Bing; Dierre, Benjamin; Sekiguchi, Takashi; Jiang, Xin

doi:10.1039/c4nr04464a

Cited by 21 publications

(22 citation statements)

References 32 publications

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“…That is because of the variation in tensile stress and inevitable crystal defects of a single nanobelt. This deduction is consistent with the observations of HRTEM above and the report from other researchers [15,16]. …”

Section: Powder X-ray Analysissupporting

confidence: 94%

“…Cathodoluminescence (CL) is especially useful to characterize the optical properties of individual nanostructures due to its high spatial resolution (up to a few nanometers) [16]. CL is an optical phenomenon of light emission from a luminescent material caused by the material interacting with a beam of electrons.…”

Section: Introductionmentioning

confidence: 99%

“…It has been applied in many research fields, e.g. geosciences where it is used to identify minerals, crystalline phases, and presence of defects in solids [15,16,27,28].…”

Section: Introductionmentioning

confidence: 99%

“…Among the various properties of 1D ZnS nanostructures, the investigation of their optical properties [10,13,15,16] is particularly important. Cathodoluminescence (CL) is especially useful to characterize the optical properties of individual nanostructures due to its high spatial resolution (up to a few nanometers) [16].…”

Section: Introductionmentioning

confidence: 99%

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Controllable synthesis and cathodoluminescent property of 1D wurtzite ZnS nanostructures

Jin

et al. 2015

Journal of Alloys and Compounds

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Section: Powder X-ray Analysissupporting

confidence: 94%

Section: Introductionmentioning

confidence: 99%

“…It has been applied in many research fields, e.g. geosciences where it is used to identify minerals, crystalline phases, and presence of defects in solids [15,16,27,28].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Controllable synthesis and cathodoluminescent property of 1D wurtzite ZnS nanostructures

Jin

et al. 2015

Journal of Alloys and Compounds

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“…[1][2][3][4] It is well understood that the electrical properties of the nanomaterials rely heavily on their composition, morphology, size and crystal structure. 8 On the other hand, the twinning superlattices in cubic ZB nanowires induce a blue-shift of the photoluminescence because of the staggered band alignment at the twin boundaries. For instance, stacking faults have been frequently observed during the growth of group II-VI and III-V compound nanowires.…”

Section: Introductionmentioning

confidence: 99%

Zn-dopant dependent defect evolution in GaN nanowires

et al. 2015

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Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

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Synthesis and characterization of dandelion‐like ZnS with high antibacterial activity

Wang

2016

European Microscopy Congress 2016: Proceedings

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Nanostructure materials have been the subject of widespread research over the past couple of decades. Recent experiments on nanostructure materials have revealed a host of novel physical and chemical properties, which are significantly different from that of the conventional materials. Many workers are devoted to developing new synthesis methods to fabricate materials with novel nanostructures. ZnS, as a vital wide‐gap semiconductor, has been extensively investigated due to its outstanding photoelectric effect, high catalytic activity and wide applications. Recently, ZnS nanomaterials with various geometrical shapes such as 1D wire, rod, or 2D sheet, belt and so on, have been prepared using variety of physical or chemical methods [1‐2]. Dandelion‐like ZnS materials assembled by 2D nanosheets or 1D nanowires are of great interest as they provide extremely large specific surface areas and unique porous microstructure [3]. However, research into the 3D nanostructure ZnS assembled by 1D ZnS nanowires is still less dealt with. What's more, majority researchers were devoted to photoluminescence and photocatalytic, few of them pay enough attention to the antibacterial activity of ZnS. Microbial contamination has become increasing difficult to control owing to the resistance offered by microbes against conventional antimicrobial agents. It is well‐know that inorganic nanomaterials, such as TiO2, AgPO3, ZnO, reveal high antibacterial activities [4‐5]. To date, only scant information about antibacterial ability of the ZnS has been recorded. In this work, dandelion‐like ZnS has been prepared via the method of facile one‐pot hydrothermal synthesis. The dandelion‐like ZnS was characterized by transmission electron microscope, scanning electron microscope, energy dispersive spectrometer and X‐ray diffraction. The results reveal that the surface topographies of the 3D dandelion‐like ZnS particles are actually assembled by plenty of interlaced 1D ZnS nanowires. The influence of reaction time, reaction temperature, Zn/S mole ratio and different zinc and sulfur sources to the dandelion‐like structure were investigated. The dandelion‐like ZnS exhibits superior ability in inhibiting the growth of Escherichia coli, which makes it promising candidate for biological materials. The large specific surface area, porous surface morphology and the releasing of the Zn2+ ions are considered probable causes for the high antibiotic activity of the dandelion‐like ZnS.

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Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts

Cited by 21 publications

References 32 publications

Controllable synthesis and cathodoluminescent property of 1D wurtzite ZnS nanostructures

Controllable synthesis and cathodoluminescent property of 1D wurtzite ZnS nanostructures

Zn-dopant dependent defect evolution in GaN nanowires

Synthesis and characterization of dandelion‐like ZnS with high antibacterial activity

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