2019
DOI: 10.1002/pssr.201900163
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Local Corrosion of Silicon as Root Cause for Potential‐Induced Degradation at the Rear Side of Bifacial PERC Solar Cells

Abstract: Industrial bifacial PERC solar cells are exposed to a high‐voltage stress at the rear side. The tested cells show a potential‐induced degradation (PID) in Voc and Isc. From a front side current–voltage measurement, a power loss of about 12%rel is observed, however, without a significant change in the fill factor. The degradation is traced back to micron‐sized hole‐shaped damages of the rear surface, which correlate with localized regions of increased recombination. A focused ion beam (FIB) cross‐section throug… Show more

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Cited by 38 publications
(46 citation statements)
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References 11 publications
(21 reference statements)
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“…For one of the PID-c mechanisms observed in bifacial solar cells, it is assumed that beneath the AlO X /SiN Y passivation layer stack a corrosion process of the Si surface occurs, resulting in the formation of a SiO 2 layer. 23 It has been shown that this degradation mode only affects I SC and V OC similarly to the behavior under PID-p. However, PID-c shows an irreversible behavior whereas PID-s and PID-p are shown to be reversible with thermal treatment and/or the application of reverse bias between the active cell circuit and the grounded module frame.…”
Section: Introductionmentioning
confidence: 93%
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“…For one of the PID-c mechanisms observed in bifacial solar cells, it is assumed that beneath the AlO X /SiN Y passivation layer stack a corrosion process of the Si surface occurs, resulting in the formation of a SiO 2 layer. 23 It has been shown that this degradation mode only affects I SC and V OC similarly to the behavior under PID-p. However, PID-c shows an irreversible behavior whereas PID-s and PID-p are shown to be reversible with thermal treatment and/or the application of reverse bias between the active cell circuit and the grounded module frame.…”
Section: Introductionmentioning
confidence: 93%
“…19 Until now, research has identified three different PID modes for bifacial c-Si solar cells, namely, PID of the shunting type (PID-s), PID of the polarization type (PID-p), and PID of the corrosive type (PID-c). [20][21][22][23] PID-s has been shown to be caused by sodium (Na) diffusing into silicon stacking faults through the pn-junction and thus shunting the cell. 20,[24][25][26] This degradation mode affects primarily the fill factor (FF), next the open-circuit voltage (V OC ), and lastly the short-circuit current (I SC ).…”
Section: Introductionmentioning
confidence: 99%
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“…In recent years, more photovoltaic companies and researchers [1,2] began research and production of silicon bifacial solar cells and passivated emitter and rear cells (PERC) based on p-type crystalline Si wafers are mainstream high-efficiency cell technology although most of the advanced cell technology has their own dual-generation properties. The performance of industrial-type screen-printed 6-inch PERC solar cells has been significantly increased over the past few years.…”
Section: Introductionmentioning
confidence: 99%