2021
DOI: 10.1021/acs.nanolett.1c02771
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Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions

Abstract: The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density, and therefore the overall current distribution, can be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five minigates. We demonstrate that not only can the junction … Show more

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Cited by 22 publications
(10 citation statements)
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References 36 publications
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“…Such gate-controlled superconducting response strongly supports our proposal of manipulating MBS with mini gates, when the topological superconductivity is achieved with B x and a phase bias, ϕ . This demonstration of the mini-gate control, first established in our work, was later extended to experiments with even a larger number of mini gates 45 .…”
Section: Resultssupporting
confidence: 64%
“…Such gate-controlled superconducting response strongly supports our proposal of manipulating MBS with mini gates, when the topological superconductivity is achieved with B x and a phase bias, ϕ . This demonstration of the mini-gate control, first established in our work, was later extended to experiments with even a larger number of mini gates 45 .…”
Section: Resultssupporting
confidence: 64%
“…In the long-array limit, a giant-spin model yielded a quantum phase transition as function of flux offset between protected and unprotected regimes. The construction of interferometer array protected qubits can be realized using existing semiconductor-superconductor hybrid materials based on semiconductor nanowires [19] or twodimensional heterostructures [28,45,46]. where ñ and ñg are vectors that contain the Cooper pair number operators and the offset charges of the N +1 superconducting islands, and φ is the vector of phase operators.…”
Section: Discussionmentioning
confidence: 99%
“…For each junction leg in our device, a negative gate voltage can act to concentrate J c (x i ) near the mesa edges, where the gating efficiency is weaker. This is due to formation of an electron accumulation layer at the mesa edge which shows weak gate coupling, and is a consequence of the band bending effect in InAs [36][37][38]. The other peak in the J c (x i ) forms near the common central region as the gates do not cover the junction legs entirely.…”
Section: Tuning Of Diode Polarity and Efficiency By Electrostatic Gatingmentioning
confidence: 99%