High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga1−xInxAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating the strain broadening from the thermal motion. The strain broadening is five times larger for distant atomic neighbors as compared to nearest neighbors. The results are in agreement with model calculations.The average atomic arrangement of crystalline semiconductor alloys is usually obtained from the position and intensities of the Bragg peaks in a diffraction experiment [1], and the actual nearest neighbor and sometimes next nearest neighbor distances for various pairs of atoms by XAFS measurements [2]. In this Letter we show how high energy x-ray diffraction and the resulting highresolution atomic pair distribution functions (PDF)s can be used for studying the internal strain in Ga 1−x In x As alloys. We show that the first peak in the PDFs can be resolved as a doublet and, hence, the mean position and also the widths of the Ga-As and In-As bond length distributions determined. The detailed structure in the PDF can be followed out to very large distances and the widths of the various peaks obtained. We use the concentration dependence of the peak widths to separate the strain broadening from the thermal broadening. At large distances the strain broadening is shown to be about five times larger than for nearest neighbor pairs. Using a simple valence force field model, we get good agreement with the experimental results.