Local atomic order in amorphous III-V semiconductors by EXAFS and X-ray anomalous scattering

Udron, D.; Flank, A.M.; Lagarde, P.; Raoux, D.; Thèye, M. L.

doi:10.1016/0022-3093(92)90153-b

Cited by 22 publications

(13 citation statements)

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“…Flank et al 6 have suggested that the system partly phase separated ͑due to clustering of excess P atoms͒ while Udron et al indicated that P is more or less uniformly distributed in the samples, but suggested that wrong bonds were due to local composition fluctuations rather than the presence of topological defects. 7 Phase separation or local compositional fluctuations are unlikely causes of the presence of homopolar bonding reported herein. First, recall that the amorphous samples were produced by ion implantation into stoichiometric polycrystalline InP.…”

Section: Resultsmentioning

confidence: 73%

“…Homopolar bonds have been reported in previous EXAFS experiments that characterized the structure of amorphous InP prepared by flash evaporation 6 and deposition. 7 However, the samples investigated were highly nonstoichiometric with an excess of P atoms. The proportion of wrong bonds was reported to be between 10% and 40%, as a result, the origin of the homopolar bonding was not clear.…”

Section: Resultsmentioning

confidence: 99%

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Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

et al. 2003

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Extended x-ray absorption fine structure measurements have been used to characterize the low-temperature, thermally induced structural relaxation of amorphous InP. We show reductions in both chemical and structural disorder associated with homopolar and heteropolar bonding, respectively, are operative during structural relaxation of this amorphous compound semiconductor. The latter is analogous to that observed in the amorphous elemental semiconductors Ge and Si. Though a reduction in homopolar bonding accompanies structural relaxation, the fully relaxed, minimum-energy configuration of the amorphous phase still retains chemical disorder.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

et al. 2003

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“…a-InP is normally produced by flash evaporation of c-InP and deposition onto an appropriate substrate, [17][18][19][20][21] but it can also be obtained by ion implantation -which in principle yields better-quality material with reproducible properties -though usually not in quantity sufficient for such atomic structural measurements as x-rays to be carried out. 22 There are only very few reports of ion-implantation-amorphization of InP.…”

Section: Introductionmentioning

confidence: 99%

Structure and electronic properties of amorphous indium phosphide from first principles

1998

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We report detailed and extensive first-principles molecular-dynamics (MD) simulations of the structure and electronic properties of amorphous InP produced by rapid quenching from the liquid. The structure of the material is found to be strongly ordered chemically, even though there is a significant number of coordination defects and despite the presence of odd-membered rings. We find, as a consequence, that there exists "wrong bonds" in the system, in an amount of about 8%; these result from the presence of coordination defects, not of local composition fluctuations, as has been conjectured. The system, in fact, is found to be over-coordinated, which might be the reason for the observed higher density of a-InP compared to c-InP. We have also investigated the possibility of pressure-amorphizing InP. Our calculations indicate that the cost of a transformation of the compressed zinc-blende crystal into an amorphous phase is so large that it is very unlikely that it would take place.

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“…The majority of reports in the literature on these materials refers to Ill-V amorphous films GaAs, Ga-P and In-P [1][2][3][4][5][6][7]. The basic factor which determines the electrical and optical characteristics, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the synchrotron radiation technique of differential anomalous X-ray scattering (DAXS) has proved to be a very effective tool for the structural studies of two-component noncrystalline semiconduction as amorphous Ga-As [3,4] and glassy As-Te [8]. This technique yields the structural information which is qualitatively similar to that obtained from EXAFS but includes long-range correlations [9].…”

Section: Introductionmentioning

confidence: 99%

Interpretation of Differential Anomalous X-Ray Scattering Data for Amorphous Cd-As

et al. 1994

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The computational procedure, based on Warren's exact method for an amorphous sample with more than one atom, was developed to obtain the short-range order structural parameters from the differential anomalous X-ray scattering data, collected using the synchrotron radiation. The experimental differential radial distribution functions were fitted with the true distribution functions expressed in an analytical form and broadened by convolution with the pair functions. It was found that atoms in the amorphous Cd-As films remain almost tetrahedrally coordinated and the investigated alloys are chemically ordered.

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Local atomic order in amorphous III-V semiconductors by EXAFS and X-ray anomalous scattering

Cited by 22 publications

References 3 publications

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Structure and electronic properties of amorphous indium phosphide from first principles

Interpretation of Differential Anomalous X-Ray Scattering Data for Amorphous Cd-As

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