Loading Effect and Temperature Dependence of Etch Rate in CF₄Plasma

Abstract

Abslraact. The calculauon of the torque T an a permanent ellipsoidal magnet immersed in a magnetic liquid is more delicate than one might be inclined to expect. This problem, for instance, has a bearing on fundamental discussions carried out in the past about the choice between different formulotioor of electromagnetic theory. The present paper analyses the calculation of T anew. emphasizing the relation to, and the explanation of. the imponmt experiment carded out by Whitwonh and Stopes-Roe in 1971. The outcome of the experiment is explained in r e m of stmdxd magnetastatics. based upon use of the scalar potential ). The relation to the sa-dled KennellySommerfeld eontmveny is commented upon. The physical interpretation of the situation is elucidated by -ing out in deml sn examination of the total energy balance in the special case of spherical mgnet geometry.

Development of a Multistep SiO2 Plasma Etching Process in a Minibatch Reactor Using Response‐Surface Methodology

“…11 and 12 suggest that greater etch selectivity may be attained if He is added to the C2F6/CHF8 plasma. This is in accord with results obtained with different etching equipment with CF4/CHF3 plasmas (20) and with He/CF4 mixtures for He concentrations as large as -50% by Temperature effects.--As discussed elsewhere (3,22,23,45), temperature can be an important parameter in plasma processing, especially for processes which have an appreciable chemical component (Arrhenius behavior) in the etching reaction. Although the influence of substrate temperature on etch rates and etch uniformity was not evaluated in the response-surface experiments, it was examined subsequently with the process parameters which are listed in Table III for step 2 of the contact process.…”

Coulomb-Controlled Single Electron Field Emission via a Freely Suspended Metallic Island

“…The island is only connected to the surrounding electrodes by thin layers of CF 2 , that is, Teflon components. It is known that Teflon is produced during CF 4 plasma treatments, 13,14 as such a layer apparently lowers the work function of the coated material. 14,15 We note that the island is placed at distances of 12 and 26 nm toward source and drain, respectively (see Figure 1b).…”

Effects of plasma etching chemistry and post-processing on the mechanical adhesion and electrical contact of double polysilicon layer structures

“…The higher etch rate for the polysilicon as compared to that for the nitride, as shown in Fig. 1, is due to the lower activation energy for the reaction of F atoms with silicon (0.13 eV) than that with silicon nitride (0.18 eV) [8]. Therefore, the chemistry for the etching of the first group of wafers provided no selectivity between the nitride and polysilicon etching.…”