Lithographie par faisceaux d'ions : simulations et résultats expérimentaux

Karapiperis, L.; Dubreuil, D.; David, P.; Dieumegard, D.

doi:10.1051/rphysap:0198500200209900

Rev. Phys. Appl. (Paris)

1985

DOI: 10.1051/rphysap:0198500200209900

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Lithographie par faisceaux d'ions : simulations et résultats expérimentaux

L. Karapiperis¹,

D. Dubreuil²,

P. David³

et al.

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2005

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“…Markers were imaged and an off marker area was selected with the SP. The equivalent argon ion dose per dot was approximately 10 13 cm -2 (or several µC 16 ).…”

mentioning

confidence: 99%

Integration of Scanning Probes and Ion Beams

et al. 2005

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We report the integration of a scanning force microscope with ion beams. The scanning probe images surface structures non-invasively and aligns the ion beam to regions of interest. The ion beam is transported through a hole in the scanning probe tip. Piezoresistive force sensors allow placement of micromachined cantilevers close to the ion beam lens. Scanning probe imaging and alignment is demonstrated in a vacuum chamber coupled to the ion beam line. Dot arrays are formed by ion implantation in resist layers on silicon samples with dot diameters limited by the hole size in the probe tips of a few hundred nm.

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“…Markers were imaged and an off marker area was selected with the SP. The equivalent argon ion dose per dot was approximately 10 13 cm -2 (or several µC 16 ).…”

mentioning

confidence: 99%

Integration of Scanning Probes and Ion Beams

et al. 2005

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show abstract

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Lithographie par faisceaux d'ions : simulations et résultats expérimentaux

Cited by 1 publication

References 17 publications

Integration of Scanning Probes and Ion Beams

Integration of Scanning Probes and Ion Beams

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