Lithium-Intercalated Graphene Interconnects: Prospects for On-Chip Applications

Nishad, Atul Kumar; Sharma, Rohit

doi:10.1109/jeds.2016.2614813

Cited by 35 publications

(29 citation statements)

References 12 publications

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“…In addition, electron scattering in GNRs caused by rough edge, phonons, and defects influence the MFP [30]. In this work, typical effective MFP (λ eff ) values have been adapted from previous experimental studies [1,8,[30][31][32][33][34]. In the case of MWCNT, irrespective of whether shells are semiconducting or metallic, the MFP is always a function of shell diameter.…”

Section: Resistance Modelmentioning

confidence: 99%

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Kaur

Gupta

Kumar

et al. 2021

IET Circuits, Devices & Syst

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A comparative radio-frequency (RF) and crosstalk analysis is performed on carbon nanointerconnects based on an efficient π-type equivalent single-conductor model of bundled multiwall carbon nanotubes (MWCNTs) and stacked multilayer graphene nanoribbons (MLGNRs). Simulation results are extracted using HSPICE for global-level nanointerconnects at the 14-nm node. RF performance is evaluated in terms of skin depth and a 3-dB bandwidth, while crosstalk performance is analysed in terms of crosstalk-induced delay and average power consumption. The skin-depth results indicate significant improvements in skin-depth degradation at higher frequencies for AsF 5-doped zigzag MLGNRs compared with that of Cu, nanotubes and MWCNTs. The transfer gain results explicitly demonstrate that AsF 5-doped MLGNRs exhibit excellent RF behaviour, showing 10-and 20-fold improvements over MWCNTs and copper (Cu), respectively. Further, the 3-dB bandwidth calculations for AsF 5-doped MLGNRs suggest 18.6-and 9.7-fold enhancement compared with Cu and MWCNTs at 1000 μm. Significant reductions are obtained in crosstalk-induced out-of-phase delays for AsF 5-doped MLGNRs-their delay values were 84.7% and 60.24% less than those for Cu and MWCNTs. Further, AsF 5-doped MLGNRs present the most optimal energy-delay product results, with values representing 98.6% and 99.6% improvements over their Cu and MWCNT counterparts at a global length of 1000 µm. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Resistance Modelmentioning

confidence: 99%

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Kaur

Gupta

Kumar

et al. 2021

IET Circuits, Devices & Syst

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“…where v f is the Fermi velocity of electrons in graphene (=8 × 10 5 m/s) [12]. The value of P will change when the edge roughness situation is different.…”

Section: Interconnect Modelmentioning

confidence: 99%

“…The distributed inductance L E of MLGNR interconnects consists of the equivalent kinetic inductance L eq and magnetic inductance L ma , and their relationship can be described as in Equation (12). Similarly, the p.u.l.…”

Section: Interconnect Modelmentioning

confidence: 99%

“…SLGNR is not suitable for on-chip interconnects owing to its larger intrinsic resistance [7][8][9]. Based on the types of connection with other devices or interconnects, MLGNR can be further categorized into top contact MLGNR (TC-MLGNR) and side contact MLGNR (SC-MLGNR) [10][11][12]. TC-MLGNR has only the top most layer connected to surrounding contacts while all layers of SC-MLGNR are coupled with the other contacts, which results in the distributed scattering resistance of the former over the latter.…”

Section: Introductionmentioning

confidence: 99%

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The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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“…al. in 14 performance and reliability issues which is a concerning factor to consider for commercialization of MLGNR interconnects in near-future VLSI circuits.…”

Section: Introductionmentioning

confidence: 99%

Performance And Reliability Improvement In Intercalated MLGNR Interconnects Using Optimized Aspect Ratio

Kumari

Sharma

Sahoo

2021

Preprint

Self Cite

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In this work, aspect ratio of various intercalation doped MLGNR interconnects are optimized using a numerical approach toachieve improved performance and reliability. A numerical optimization method is presented to estimate optimized aspect ratio considering combined effects of performance, noise and reliability metrics for any arbitrary nano interconnect system. This approach is cost effective and will be extremely useful to industry for selection of aspect ratio of interconnects as it is a non-SPICE method and reduces fabrication iterations for achieving desired performance and reliability. Our numerical method suggests that by minimizing the figure of merit (i.e. Noise Delay Power Product (NPDP) / Breakdown Power PBD ratio), aspect ratio of FeCl3 doped MLGNR interconnect is optimized at 0.987, 0.61 and 0.579 for local, intermediate and global level, respectively at 7 nm node. Comparing the optimized performance metrics in this work with the estimated metrics at prescribed aspect ratio by IRDS roadmap, delay, noise delay product (NDP), power delay product (PDP), PDP/PBD ratio and figure of meritare improved by (∼2% and ∼25%), (∼44% and ∼50%), (∼9% and ∼48%), (∼6% and ∼48%) and (∼49% and ∼68%) for 10 µm and 1 mm long FeCl3 doped MLGNR interconnect, respectively at 7 nm node. Increase in contact resistance leads to significant decrease in performance and increase in optimized aspect ratio of local FeCl3 doped MLGNR interconnect. Scaling down from 10 nm to 7 nm node results in increase of optimized aspect ratio in all levels of interconnects. Even though theperformance of MLGNR degrades with scaling down but when compared to copper, the performance improves with technology scaling. Finally, this study provides circuit designers a detailed guideline for selecting an optimized aspect ratio for achieving better performance, power efficiency and reliability in doped MLGNR interconnects.

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Lithium-Intercalated Graphene Interconnects: Prospects for On-Chip Applications

Cited by 35 publications

References 12 publications

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Performance And Reliability Improvement In Intercalated MLGNR Interconnects Using Optimized Aspect Ratio

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