Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum as an effective interfacial layer in inverted bottom-emission organic light-emitting diodes

Extremely-low-voltage, high-efficiency and stability-enhanced inverted bottom OLEDs enabled via a p-type/ultra-thin metal/n-doped electron injection layer

“…However, the injection barrier of electrons is usually as high as 1.3-2.3 eV, since ITO, possessing a WF of about 4.7 eV, is widely used as a transparent cathode in inverted bottom OLEDs (IBOLEDs) and the lowest unoccupied molecular orbital (LUMO) of most electron transport materials is only 2.4-3.4 eV. [10][11][12] As a result, the injection of electrons is very difficult, which seriously restricts the performance of IBOLEDs. [13][14][15][16][17][18][19] To date, some efforts have been made for improving the electron injection efficiency of IBOLEDs.…”