2008
DOI: 10.1007/s10854-008-9707-0
|View full text |Cite
|
Sign up to set email alerts
|

Lithium-drifted, silicon radiation detectors for harsh radiation environments

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2016
2016
2016
2016

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 8 publications
0
1
0
Order By: Relevance
“…a silicon based direct conversion detector reaching 90% conversion efficiency for 30 keV photons must be at least 9 mm thick. While thick detectors have been reported previously [20], it should be noted that the maximum thickness of wafers that present silicon processing tools in foundries can handle is typically around 1 mm. The -6 -…”
Section: Jinst 11 C03040mentioning
confidence: 99%
“…a silicon based direct conversion detector reaching 90% conversion efficiency for 30 keV photons must be at least 9 mm thick. While thick detectors have been reported previously [20], it should be noted that the maximum thickness of wafers that present silicon processing tools in foundries can handle is typically around 1 mm. The -6 -…”
Section: Jinst 11 C03040mentioning
confidence: 99%